ALTERNATIVE FOR THE QUANTUM INDUCTANCE MODEL IN DOUBLE-BARRIER RESONANT-TUNNELING

H. J. M. F.  Noteborn; H. P. Joosten; Kimmo Kaski; D. Lenstra

doi:10.1006/spmi.1993.1028

ALTERNATIVE FOR THE QUANTUM INDUCTANCE MODEL IN DOUBLE-BARRIER RESONANT-TUNNELING

H. J. M. F. Noteborn, H. P. Joosten, Kimmo Kaski, D. Lenstra

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

A theoretical justification for the phenomenological equivalent circuit approach in Double-Barrier Resonant Tunneling (DBRT) is given. Starting from the combined Schrödinger and Poisson equations for the static behaviour of the DBRT diode, we arrive through a small signal analysis at a model for the dynamics. This model corresponds to an equivalent circuit consisting of two linked RC-sections. The simple equivalent circuits in which the DBRT structure is represented by a capacitor with parallel resistor, as well as more complicated circuits including a quantum inductance can all be considered special cases of our model. Furthermore, by studying the regions of stability in the phase diagrams resulting from our model, the effect of a parallel capacitor on the stability is investigated. © 1993 Academic Press. All rights reserved.

Original language	English
Pages (from-to)	153-157
Journal	Superlattices and Microstructures
Volume	13
Issue number	2
DOIs	https://doi.org/10.1006/spmi.1993.1028
Publication status	Published - 1993
MoE publication type	A1 Journal article-refereed

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10.1006/spmi.1993.1028

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title = "ALTERNATIVE FOR THE QUANTUM INDUCTANCE MODEL IN DOUBLE-BARRIER RESONANT-TUNNELING",

abstract = "A theoretical justification for the phenomenological equivalent circuit approach in Double-Barrier Resonant Tunneling (DBRT) is given. Starting from the combined Schr{\"o}dinger and Poisson equations for the static behaviour of the DBRT diode, we arrive through a small signal analysis at a model for the dynamics. This model corresponds to an equivalent circuit consisting of two linked RC-sections. The simple equivalent circuits in which the DBRT structure is represented by a capacitor with parallel resistor, as well as more complicated circuits including a quantum inductance can all be considered special cases of our model. Furthermore, by studying the regions of stability in the phase diagrams resulting from our model, the effect of a parallel capacitor on the stability is investigated. {\textcopyright} 1993 Academic Press. All rights reserved.",

author = "Noteborn, {H. J. M. F.} and Joosten, {H. P.} and Kimmo Kaski and D. Lenstra",

year = "1993",

doi = "10.1006/spmi.1993.1028",

language = "English",

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journal = "Superlattices and Microstructures",

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T1 - ALTERNATIVE FOR THE QUANTUM INDUCTANCE MODEL IN DOUBLE-BARRIER RESONANT-TUNNELING

AU - Noteborn, H. J. M. F.

AU - Joosten, H. P.

AU - Kaski, Kimmo

AU - Lenstra, D.

PY - 1993

Y1 - 1993

N2 - A theoretical justification for the phenomenological equivalent circuit approach in Double-Barrier Resonant Tunneling (DBRT) is given. Starting from the combined Schrödinger and Poisson equations for the static behaviour of the DBRT diode, we arrive through a small signal analysis at a model for the dynamics. This model corresponds to an equivalent circuit consisting of two linked RC-sections. The simple equivalent circuits in which the DBRT structure is represented by a capacitor with parallel resistor, as well as more complicated circuits including a quantum inductance can all be considered special cases of our model. Furthermore, by studying the regions of stability in the phase diagrams resulting from our model, the effect of a parallel capacitor on the stability is investigated. © 1993 Academic Press. All rights reserved.

AB - A theoretical justification for the phenomenological equivalent circuit approach in Double-Barrier Resonant Tunneling (DBRT) is given. Starting from the combined Schrödinger and Poisson equations for the static behaviour of the DBRT diode, we arrive through a small signal analysis at a model for the dynamics. This model corresponds to an equivalent circuit consisting of two linked RC-sections. The simple equivalent circuits in which the DBRT structure is represented by a capacitor with parallel resistor, as well as more complicated circuits including a quantum inductance can all be considered special cases of our model. Furthermore, by studying the regions of stability in the phase diagrams resulting from our model, the effect of a parallel capacitor on the stability is investigated. © 1993 Academic Press. All rights reserved.

U2 - 10.1006/spmi.1993.1028

DO - 10.1006/spmi.1993.1028

M3 - Article

SN - 0749-6036

VL - 13

SP - 153

EP - 157

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

ALTERNATIVE FOR THE QUANTUM INDUCTANCE MODEL IN DOUBLE-BARRIER RESONANT-TUNNELING

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