AlN metal-semiconductor field-effect transistors using Si-ion implantation

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Researchers

Research units

  • University of Tsukuba
  • Massachusetts Institute of Technology

Abstract

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230°C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250°C. The off-state breakdown voltage is 2370V for drain-to-gate spacing of 25μm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Details

Original languageEnglish
Article number04FR11
Number of pages5
JournalJapanese Journal of Applied Physics
Volume57
Issue number4
Publication statusPublished - 1 Apr 2018
MoE publication typeA1 Journal article-refereed

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