ALD/MLD processes for Mn and Co based hybrid thin films

E. Ahvenniemi, M. Karppinen*

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    14 Citations (Scopus)
    350 Downloads (Pure)

    Abstract

    Here we report the growth of novel transition metal-organic thin-film materials consisting of manganese or cobalt as the metal component and terephthalate as the rigid organic backbone. The hybrid thin films are deposited by the currently strongly emerging atomic/molecular layer deposition (ALD/MLD) technique using the combination of a metal β-diketonate, i.e. Mn(thd)3, Co(acac)3 or Co(thd)2, and terephthalic acid (1,4-benzenedicarboxylic acid) as precursors. All the processes yield homogeneous and notably smooth amorphous metal-terephthalate hybrid thin films with growth rates of 1-2 Å per cycle. The films are stable towards humidity and withstand high temperatures up to 300 or 400 °C under an oxidative or a reductive atmosphere. The films are characterized with XRR, AFM, GIXRD, XPS and FTIR techniques.

    Original languageEnglish
    Pages (from-to)10730-10735
    Number of pages6
    JournalDalton Transactions
    Volume45
    Issue number26
    DOIs
    Publication statusPublished - 2016
    MoE publication typeA1 Journal article-refereed

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