ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

A.C. Jones, R. O’Kane, F. Song, P. Heys, P.A. Williams, Lauri Niinistö, Jaakko Niinistö, M. Putkonen, R. Hammond, A. Bacon

    Research output: Working paperProfessional

    Original languageEnglish
    Pages116
    Publication statusPublished - 2006
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameALD 2006, Seoul, Korea, July 24-26, 2006, Abstract Book,

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