ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

A.C. Jones; R. O’Kane; F. Song; P. Heys; P.A. Williams; Lauri Niinistö; Jaakko Niinistö; M. Putkonen; R. Hammond; A. Bacon

ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

A.C. Jones, R. O’Kane, F. Song, P. Heys, P.A. Williams, Lauri Niinistö, Jaakko Niinistö, M. Putkonen, R. Hammond, A. Bacon

Research output: Working paper › Professional

Original language	English
Pages	116
Publication status	Published - 2006
MoE publication type	D4 Published development or research report or study

Publication series

Name	ALD 2006, Seoul, Korea, July 24-26, 2006, Abstract Book,

Cite this

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T1 - ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

AU - Jones, A.C.

AU - O’Kane, R.

AU - Song, F.

AU - Heys, P.

AU - Williams, P.A.

AU - Niinistö, Lauri

AU - Niinistö, Jaakko

AU - Putkonen, M.

AU - Hammond, R.

AU - Bacon, A.

PY - 2006

Y1 - 2006

M3 - Working paper

T3 - ALD 2006, Seoul, Korea, July 24-26, 2006, Abstract Book,

SP - 116

BT - ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

ER -