Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Engineering & Materials Science

• Plasma deposition 100%
• Atomic layer deposition 92%
• Encapsulation 68%
• Aluminum oxide 57%
• Thin films 57%
• Plasmas 37%
• Residual stresses 35%
• Hot Temperature 29%
• Temperature 24%
• Permeation 23%
• Water vapor 22%
• Polyethylenes 21%
• Tensile stress 20%
• Impurities 19%
• Nitrogen 18%
• Moisture 17%
• Surface roughness 16%
• Hydrogen 16%
• Carbon 15%
• Substrates 14%
• Chemical analysis 13%

Physics & Astronomy

• thermal plasmas 72%
• atomic layer epitaxy 62%
• residual stress 55%
• moisture 32%
• thin films 31%
• tensile stress 30%
• water vapor 30%
• thick films 28%
• polyethylenes 27%
• roughness 24%
• nitrogen 22%
• carbon 20%
• impurities 19%
• optimization 19%
• hydrogen 18%

Chemical Compounds

• Thermal Plasma 85%
• Residual Stress 80%
• Deposition Process 65%
• Encapsulation 52%
• Plasma 37%
• Liquid Film 29%
• Water Vapor 28%
• Chemical Element 23%
• Application 19%
• Nitrogen 18%
• Hydrogen 15%
• Carbon Atom 14%
• Time 10%