Advanced simulation of rram memory cells

Toufik Sadi, Oves Badami, Vihar Georgiev, Jie Ding, Asen Asenov

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

Resistive random-access memories (RRAMs) are overwhelmingly viewed as potential candidates for the next generation of non-volatile memory devices. Here, we discuss the advantages of the kinetic Monte Carlo (KMC) simulation framework for RRAMs. We use a robust KMC simulator to analyze transport in promising oxide structures. The simulator couples self-consistently charge transport and thermal effects in the three-dimensional (3D) space, allowing a realistic reconstruction of the conductive filaments responsible for switching. By presenting insightful results, we argue that using a 3D physical electro-thermal simulator is necessary for understanding RRAM operation and reliability.

Original languageEnglish
Title of host publicationProceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019
EditorsFan Ye, Ting-Ao Tang
PublisherIEEE Computer Society
Number of pages4
ISBN (Electronic)9781728107356
DOIs
Publication statusPublished - 1 Oct 2019
MoE publication typeA4 Article in a conference publication
EventIEEE International Conference on Advanced Semiconductor Integrated Circuits - Chongqing, China
Duration: 29 Oct 20191 Nov 2019
Conference number: 13

Publication series

NameProceedings of International Conference on ASIC
ISSN (Print)2162-7541
ISSN (Electronic)2162-755X

Conference

ConferenceIEEE International Conference on Advanced Semiconductor Integrated Circuits
Abbreviated titleASICON
Country/TerritoryChina
CityChongqing
Period29/10/201901/11/2019

Keywords

  • Charge transport
  • Electron-ion interactions
  • Kinetic Monte Carlo (KMC)
  • Multi-scale modelling
  • Resistive random-access memories (RRAMs)
  • Self-heating

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