Advanced deposition tools for the development of oxide thin films

Research output: Chapter in Book/Report/Conference proceedingChapterScientificpeer-review

Abstract

The incorporation of magnetic properties into oxide semiconductors has received a lot of attention as a promising route to developing diluted magnetic oxides. Intensive research efforts have been focused on defect induced magnetization in oxide semiconductors, with doping and disordering in semiconductor lattice being prominent techniques that have sparked tremendous research interest over the last few decades. This chapter discusses advanced materials growth techniques such as atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma enhanced-chemical vapor deposition (PE-CVD), metalorganic vapor-phase epitaxy (MOVPE), and molecular beam epitaxy (MBE) for controlled doping and disordering to develop defect-induced ferromagnetic coupling in oxide semiconductor thin films. This chapter also discussed the most recent Ferromagnetism results obtained in titanium dioxide, zinc oxide, magnesium oxide, and tin dioxide.

Original languageEnglish
Title of host publicationDefect-Induced Magnetism in Oxide Semiconductors
PublisherWoodhead Publishing
Pages135-164
Number of pages30
ISBN (Electronic)978-0-323-90907-5
ISBN (Print)978-0-323-90908-2
DOIs
Publication statusPublished - 5 Jun 2023
MoE publication typeA3 Book section, Chapters in research books

Publication series

NameWoodhead Publishing Series in Electronic and Optical Materials

Keywords

  • atomic layer deposition
  • chemical vapor deposition
  • epitaxy
  • Magnetic properties
  • metal oxides
  • nanofilms
  • oxide thin films

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