@inbook{f04a39eedcb84030a2edd36f957bc924,
title = "Advanced deposition tools for the development of oxide thin films",
abstract = "The incorporation of magnetic properties into oxide semiconductors has received a lot of attention as a promising route to developing diluted magnetic oxides. Intensive research efforts have been focused on defect induced magnetization in oxide semiconductors, with doping and disordering in semiconductor lattice being prominent techniques that have sparked tremendous research interest over the last few decades. This chapter discusses advanced materials growth techniques such as atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma enhanced-chemical vapor deposition (PE-CVD), metalorganic vapor-phase epitaxy (MOVPE), and molecular beam epitaxy (MBE) for controlled doping and disordering to develop defect-induced ferromagnetic coupling in oxide semiconductor thin films. This chapter also discussed the most recent Ferromagnetism results obtained in titanium dioxide, zinc oxide, magnesium oxide, and tin dioxide.",
keywords = "atomic layer deposition, chemical vapor deposition, epitaxy, Magnetic properties, metal oxides, nanofilms, oxide thin films",
author = "Camilla Tossi and Ornella Laouadi and Ramesh Raju and Ilkka Tittonen and Singh, {Aadesh P.}",
note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd. All rights reserved.",
year = "2023",
month = jun,
day = "5",
doi = "10.1016/B978-0-323-90907-5.00023-3",
language = "English",
isbn = "978-0-323-90908-2",
series = "Woodhead Publishing Series in Electronic and Optical Materials",
publisher = "Woodhead Publishing",
pages = "135--164",
booktitle = "Defect-Induced Magnetism in Oxide Semiconductors",
address = "United Kingdom",
}