Acceptors in undoped GaSb; the role of vacancy defects

Jiri Kujala, J. Slotte, F. Tuomisto

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)
271 Downloads (Pure)

Abstract

The conventional lifetime setup was used to study Czochralski grown unintentionally p- and n- type ([n] ≈ 6 × 1017cm−3) GaSb bulk samples. Several approaches were used to analyze the data. However, it was not possible to successfully analyze the obtained spectrums with the conventional trapping model. From the analyzed data it was derived that the reason for p-type behavior of GaSb was not VGa. Additionally, the role of gallium vacancy was studied and it's effect to lifetime values are shortly discussed.
Original languageEnglish
Article number012042
Pages (from-to)1-4
Number of pages4
JournalJournal of Physics: Conference Series
Volume443
Issue number1
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Keywords

  • GaSb
  • positron

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