Acceptor Type Vacancy Complexes In As-Grown ZnO

Asier Zubiaga, Filip Tuomisto, J. Zuniga-Perez

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

One of the many technological areas that ZnO is interesting for is the construction of opto‐electronic devices working in the blue‐UV range as its large band gap (∼3.4 eV at 10 K) makes them suitable for that purpose. As‐grown ZnO shows generally n‐type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, LiZn and NaZn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as‐grown, O implanted and Al doped will be presented. Results show that as‐grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.
Original languageEnglish
Title of host publication2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES
EditorsG Ferro, P Siffert
PublisherAmerican Institute of Physics
Pages217-220
Number of pages4
ISBN (Print)978-0-7354-0847-0
DOIs
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
EventConference of the European Materials Research Society Symposium F - Strasbourg, France
Duration: 8 Jun 201010 Jun 2010

Publication series

NameAIP Conference Proceedings
PublisherAmerican Institute of Physics
Volume1292
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceConference of the European Materials Research Society Symposium F
CountryFrance
CityStrasbourg
Period08/06/201010/06/2010

Keywords

  • positron
  • vacancy defects
  • ZnO

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