One of the many technological areas that ZnO is interesting for is the construction of opto‐electronic devices working in the blue‐UV range as its large band gap (∼3.4 eV at 10 K) makes them suitable for that purpose. As‐grown ZnO shows generally n‐type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, LiZn and NaZn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as‐grown, O implanted and Al doped will be presented. Results show that as‐grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.
|Name||AIP Conference Proceedings |
|Publisher||American Institute of Physics|
|Conference||Conference of the European Materials Research Society Symposium F|
|Period||08/06/2010 → 10/06/2010|
- vacancy defects