Ab-initio study of oxygen complexes in silicon

M. Pesola, J. von Boehm, T. Mattila, R.M. Nieminen

Research output: Working paperProfessional

Original languageEnglish
Pages1
Publication statusPublished - 1998
MoE publication typeD4 Published development or research report or study

Publication series

NameGordon Conference on Point and Line Defects in Semiconductors, New London, New Hampshire, USA, July 12-17, 1998
PublisherChris G. van de Walle

Keywords

  • binding energy
  • local vibration
  • oxygen in silicon

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