A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver

Kaisa Ryynanen; Kari Stadius; Jan Bergman; Goksu Kaval; Gregor Lasser; Vessen Vassilev; Christian Fager; Jussi Ryynanen

doi:10.1109/ICECS61496.2024.10848860

A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver

Kaisa Ryynanen^*, Kari Stadius^*, Jan Bergman^*, Goksu Kaval, Gregor Lasser, Vessen Vassilev, Christian Fager, Jussi Ryynanen^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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Abstract

This paper presents a wideband GaAs low-noise amplifier (LNA) that operates as a pre-amplifier for a CMOS receiver, with a background motivation of a chiplet-level integration. A GaAs pre-amplifier will improve the total gain and noise performance of the receiver. The paper presents a comprehensive analytical method for wideband matching - a design methodology for optimum matching networks. As a result, this LNA features a particularly wide bandwidth from 60 to 100 GHz with an average gain of 15 dB. The LNA was implemented with 0.1-μm GaAs pHEMT technology. The circuit occupies a die area of 1 mm-, noise figure is 7.2-8.5 dB at 60-100 GHz with a gain of 12-21 dB and DC power consumption of 20 mW.

Original language	English
Title of host publication	2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024
Publisher	IEEE
Number of pages	4
ISBN (Print)	979-8-3503-7721-7
DOIs	https://doi.org/10.1109/ICECS61496.2024.10848860
Publication status	Published - 2024
MoE publication type	A4 Conference publication
Event	IEEE International Conference on Electronics, Circuits and Systems - Nancy, France Duration: 18 Nov 2024 → 20 Nov 2024 Conference number: 31

Publication series

Name	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
ISSN (Print)	2994-5755
ISSN (Electronic)	2995-0589

Conference

Conference	IEEE International Conference on Electronics, Circuits and Systems
Abbreviated title	ICECS
Country/Territory	France
City	Nancy
Period	18/11/2024 → 20/11/2024

Keywords

Gallium arsenide (GaAs)
low-noise amplifier (LNA)
millimeter-wave (mm-wave)
wideband

Access to Document

10.1109/ICECS61496.2024.10848860

A_Wideband_60–100_GHz_GaAs_Low-NoiseAccepted author manuscript, 3.23 MB

Cite this

Ryynanen, K., Stadius, K., Bergman, J., Kaval, G., Lasser, G., Vassilev, V., Fager, C., & Ryynanen, J. (2024). A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver. In 2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems). IEEE. https://doi.org/10.1109/ICECS61496.2024.10848860

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title = "A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver",

abstract = "This paper presents a wideband GaAs low-noise amplifier (LNA) that operates as a pre-amplifier for a CMOS receiver, with a background motivation of a chiplet-level integration. A GaAs pre-amplifier will improve the total gain and noise performance of the receiver. The paper presents a comprehensive analytical method for wideband matching - a design methodology for optimum matching networks. As a result, this LNA features a particularly wide bandwidth from 60 to 100 GHz with an average gain of 15 dB. The LNA was implemented with 0.1-μm GaAs pHEMT technology. The circuit occupies a die area of 1 mm-, noise figure is 7.2-8.5 dB at 60-100 GHz with a gain of 12-21 dB and DC power consumption of 20 mW.",

keywords = "Gallium arsenide (GaAs), low-noise amplifier (LNA), millimeter-wave (mm-wave), wideband",

author = "Kaisa Ryynanen and Kari Stadius and Jan Bergman and Goksu Kaval and Gregor Lasser and Vessen Vassilev and Christian Fager and Jussi Ryynanen",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; IEEE International Conference on Electronics, Circuits and Systems, ICECS ; Conference date: 18-11-2024 Through 20-11-2024",

year = "2024",

doi = "10.1109/ICECS61496.2024.10848860",

language = "English",

isbn = "979-8-3503-7721-7",

series = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

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Ryynanen, K, Stadius, K , Bergman, J, Kaval, G, Lasser, G, Vassilev, V, Fager, C & Ryynanen, J 2024, A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver. in 2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024. Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, IEEE, IEEE International Conference on Electronics, Circuits and Systems, Nancy, France, 18/11/2024. https://doi.org/10.1109/ICECS61496.2024.10848860

A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver. / Ryynanen, Kaisa; Stadius, Kari ; Bergman, Jan et al.
2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024. IEEE, 2024. (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver

AU - Ryynanen, Kaisa

AU - Stadius, Kari

AU - Bergman, Jan

AU - Kaval, Goksu

AU - Lasser, Gregor

AU - Vassilev, Vessen

AU - Fager, Christian

AU - Ryynanen, Jussi

N1 - Conference code: 31

PY - 2024

Y1 - 2024

N2 - This paper presents a wideband GaAs low-noise amplifier (LNA) that operates as a pre-amplifier for a CMOS receiver, with a background motivation of a chiplet-level integration. A GaAs pre-amplifier will improve the total gain and noise performance of the receiver. The paper presents a comprehensive analytical method for wideband matching - a design methodology for optimum matching networks. As a result, this LNA features a particularly wide bandwidth from 60 to 100 GHz with an average gain of 15 dB. The LNA was implemented with 0.1-μm GaAs pHEMT technology. The circuit occupies a die area of 1 mm-, noise figure is 7.2-8.5 dB at 60-100 GHz with a gain of 12-21 dB and DC power consumption of 20 mW.

AB - This paper presents a wideband GaAs low-noise amplifier (LNA) that operates as a pre-amplifier for a CMOS receiver, with a background motivation of a chiplet-level integration. A GaAs pre-amplifier will improve the total gain and noise performance of the receiver. The paper presents a comprehensive analytical method for wideband matching - a design methodology for optimum matching networks. As a result, this LNA features a particularly wide bandwidth from 60 to 100 GHz with an average gain of 15 dB. The LNA was implemented with 0.1-μm GaAs pHEMT technology. The circuit occupies a die area of 1 mm-, noise figure is 7.2-8.5 dB at 60-100 GHz with a gain of 12-21 dB and DC power consumption of 20 mW.

KW - Gallium arsenide (GaAs)

KW - low-noise amplifier (LNA)

KW - millimeter-wave (mm-wave)

KW - wideband

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DO - 10.1109/ICECS61496.2024.10848860

M3 - Conference article in proceedings

AN - SCOPUS:85217618833

SN - 979-8-3503-7721-7

T3 - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

BT - 2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024

PB - IEEE

T2 - IEEE International Conference on Electronics, Circuits and Systems

Y2 - 18 November 2024 through 20 November 2024

ER -

Ryynanen K, Stadius K , Bergman J, Kaval G, Lasser G, Vassilev V et al. A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver. In 2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024. IEEE. 2024. (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems). doi: 10.1109/ICECS61496.2024.10848860

A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver

Abstract

Publication series

Conference

Keywords

Access to Document

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ENTRY100GHz: Energy-Efficient Radio Systems at 100 GHz and beyond: Antennas, Transceivers and Waveforms

Aalto Electronics-ICT

Cite this

A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

ENTRY100GHz: Energy-Efficient Radio Systems at 100 GHz and beyond: Antennas, Transceivers and Waveforms

Equipment

Aalto Electronics-ICT

Cite this