A Temperature Sensor with 3 sigma Inaccuracy of+0.5/-0.75 degrees C and Energy per Conversion of 0.65 mu J Using a 0.18 mu m CMOS Technology

Mikail Yucetas*, Mika Pulkkinen, Jakub Gronicz, Kari Halonen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

We present an integrated temperature sensor, which utilises bipolar transistors present in a 0.18 mu m CMOS process. A bipolar transistor is biased with two different current densities consecutively to have a voltage proportional to absolute temperature (PTAT). Two such bipolars are used to achieve a differential signal. The differential PTAT signal is fed to an incremental Delta Sigma. ADC to have temperature information in digital domain, which is then processed with an on-chip DSP block. The whole sensor can he put into power down mode after a conversion is done. The sensor operates in the temperature range from -40 degrees C to +85 degrees C. The energy per conversion is 0.65 mu J when the sensor output rate is at 3 conversions/s. The inaccuracy of the sensor is +0.51-0.75 degrees C (3 sigma) after three point fitting.

Original languageEnglish
Title of host publication2013 NORCHIP
PublisherIEEE
Number of pages4
Publication statusPublished - 2013
MoE publication typeA4 Article in a conference publication
EventNORCHIP Conference - Vilnius, Lithuania
Duration: 11 Nov 201312 Nov 2013

Conference

ConferenceNORCHIP Conference
CountryLithuania
CityVilnius
Period11/11/201312/11/2013

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