We present an integrated temperature sensor, which utilises bipolar transistors present in a 0.18 mu m CMOS process. A bipolar transistor is biased with two different current densities consecutively to have a voltage proportional to absolute temperature (PTAT). Two such bipolars are used to achieve a differential signal. The differential PTAT signal is fed to an incremental Delta Sigma. ADC to have temperature information in digital domain, which is then processed with an on-chip DSP block. The whole sensor can he put into power down mode after a conversion is done. The sensor operates in the temperature range from -40 degrees C to +85 degrees C. The energy per conversion is 0.65 mu J when the sensor output rate is at 3 conversions/s. The inaccuracy of the sensor is +0.51-0.75 degrees C (3 sigma) after three point fitting.
|Title of host publication||2013 NORCHIP|
|Number of pages||4|
|Publication status||Published - 2013|
|MoE publication type||A4 Article in a conference publication|
|Event||NORCHIP Conference - Vilnius, Lithuania|
Duration: 11 Nov 2013 → 12 Nov 2013
|Period||11/11/2013 → 12/11/2013|