A technique for large-area position-controlled growth of GaAs nanowire arrays

Christoffer Kauppinen, Tuomas Haggren, Aleksandr Kravchenko, Hua Jiang, Teppo Huhtio, Esko Kauppinen, Veer Dhaka, Sami Suihkonen, Matti Kaivola, Harri Lipsanen, Markku Sopanen

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)


We demonstrate a technique for fabricating position-controlled, large-area arrays of vertical semiconductor nanowires (NWs) with adjustable periods and NW diameters. In our approach, a Au-covered GaAs substrate is first coated with a thin film of photoresponsive azopolymer, which is exposed twice to a laser interference pattern forming a 2D surface relief grating. After dry etching, an array of polymer islands is formed, which is used as a mask to fabricate a matrix of gold particles. The Au particles are then used as seeds in vapour-liquid-solid growth to create arrays of vertical GaAs NWs using metalorganic vapour phase epitaxy. The presented technique enables producing NWs of uniform size distribution with high throughput and potentially on large wafer sizes without relying on expensive lithography techniques. The feasibility of the technique is demonstrated by arrays of vertical NWs with periods of 255-1000 nm and diameters of 50-80 nm on a 2 × 2 cm area. The grown NWs exhibit high long range order and good crystalline quality. Although only GaAs NWs were grown in this study, in principle, the presented technique is suitable for any material available for Au seeded NW growth.

Original languageEnglish
Article number135601
Number of pages6
Issue number13
Publication statusPublished - 22 Feb 2016
MoE publication typeA1 Journal article-refereed


  • azopolymer
  • GaAs
  • laser interference
  • lithography
  • nanowires
  • vapour-liquid-solid


Dive into the research topics of 'A technique for large-area position-controlled growth of GaAs nanowire arrays'. Together they form a unique fingerprint.

Cite this