A study of semi-insulating gallium arsenide wafers by x-ray methods

E. Prieur

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationEspoo
    Pages37-39
    Publication statusPublished - 1992
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameOptoelectronics Laboratory, Helsinki University of Technology
    No.TKK-F-C139

    Keywords

    • GaAs
    • synchrotron X-ray topography

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