A study of semi-insulating gallium arsenide wafers by deep level transient spectroscopy

E. Yli-Juuti

A study of semi-insulating gallium arsenide wafers by deep level transient spectroscopy

E. Yli-Juuti

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo
Pages	40-41
Publication status	Published - 1992
MoE publication type	D4 Published development or research report or study

Publication series

Name	Optoelectronics Laboratory, Helsinki University of Technology
No.	TKK-F-C139

Keywords

deep level transient spectroscopy (DLTS)
GaAs

Cite this

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title = "A study of semi-insulating gallium arsenide wafers by deep level transient spectroscopy",

keywords = "deep level transient spectroscopy (DLTS), GaAs, deep level transient spectroscopy (DLTS), GaAs, deep level transient spectroscopy (DLTS), GaAs",

author = "E. Yli-Juuti",

year = "1992",

language = "English",

series = "Optoelectronics Laboratory, Helsinki University of Technology",

number = "TKK-F-C139",

pages = "40--41",

type = "WorkingPaper",

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TY - UNPB

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AU - Yli-Juuti, E.

PY - 1992

Y1 - 1992

KW - deep level transient spectroscopy (DLTS)

KW - GaAs

KW - deep level transient spectroscopy (DLTS)

KW - GaAs

KW - deep level transient spectroscopy (DLTS)

KW - GaAs

M3 - Working paper

T3 - Optoelectronics Laboratory, Helsinki University of Technology

SP - 40

EP - 41

BT - A study of semi-insulating gallium arsenide wafers by deep level transient spectroscopy

CY - Espoo

ER -