A study of semi-insulating gallium arsenide wafers by deep level transient spectroscopy

E. Yli-Juuti

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationEspoo
    Pages40-41
    Publication statusPublished - 1992
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameOptoelectronics Laboratory, Helsinki University of Technology
    No.TKK-F-C139

    Keywords

    • deep level transient spectroscopy (DLTS)
    • GaAs

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