A silicon single-electron pump with tunable electrostatic confinement

A. Rossi; T. Tanttu; K. Y. Tan; R. Zhao; K. W. Chan; I. Iisakka; G. C. Tettamanzi; S. Rogge; A. S. Dzurak; Mikko Möttönen

doi:10.1109/SNW.2014.7348563

A silicon single-electron pump with tunable electrostatic confinement

A. Rossi, T. Tanttu, K. Y. Tan, R. Zhao, K. W. Chan, I. Iisakka, G. C. Tettamanzi, S. Rogge, A. S. Dzurak, Mikko Möttönen

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

Original language	English
Title of host publication	Silicon Nanoelectronics Workshop, SNW 2014
Publisher	IEEE
ISBN (Electronic)	978-1-4799-5677-7
DOIs	https://doi.org/10.1109/SNW.2014.7348563
Publication status	Published - 4 Dec 2015
MoE publication type	A4 Conference publication
Event	IEEE Silicon Nanoelectronics Workshop - Honolulu, United States Duration: 8 Jun 2014 → 9 Jun 2014 Conference number: 19

Publication series

Name	IEEE Silicon Nanoelectronics Workshop
ISSN (Print)	2161-4636

Workshop

Workshop	IEEE Silicon Nanoelectronics Workshop
Abbreviated title	SWN
Country/Territory	United States
City	Honolulu
Period	08/06/2014 → 09/06/2014
Other	Satellite Workshop of VLSI Symposia

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10.1109/SNW.2014.7348563

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title = "A silicon single-electron pump with tunable electrostatic confinement",

abstract = "Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).",

author = "A. Rossi and T. Tanttu and Tan, {K. Y.} and R. Zhao and Chan, {K. W.} and I. Iisakka and Tettamanzi, {G. C.} and S. Rogge and Dzurak, {A. S.} and Mikko M{\"o}tt{\"o}nen",

year = "2015",

month = dec,

day = "4",

doi = "10.1109/SNW.2014.7348563",

language = "English",

series = "IEEE Silicon Nanoelectronics Workshop",

publisher = "IEEE",

booktitle = "Silicon Nanoelectronics Workshop, SNW 2014",

address = "United States",

note = "IEEE Silicon Nanoelectronics Workshop, SWN ; Conference date: 08-06-2014 Through 09-06-2014",

}

Rossi, A, Tanttu, T, Tan, KY, Zhao, R, Chan, KW, Iisakka, I, Tettamanzi, GC, Rogge, S, Dzurak, AS & Möttönen, M 2015, A silicon single-electron pump with tunable electrostatic confinement. in Silicon Nanoelectronics Workshop, SNW 2014., 7348563, IEEE Silicon Nanoelectronics Workshop, IEEE, IEEE Silicon Nanoelectronics Workshop, Honolulu, Hawaii, United States, 08/06/2014. https://doi.org/10.1109/SNW.2014.7348563

TY - GEN

T1 - A silicon single-electron pump with tunable electrostatic confinement

AU - Rossi, A.

AU - Tanttu, T.

AU - Tan, K. Y.

AU - Zhao, R.

AU - Chan, K. W.

AU - Iisakka, I.

AU - Tettamanzi, G. C.

AU - Rogge, S.

AU - Dzurak, A. S.

AU - Möttönen, Mikko

N1 - Conference code: 19

PY - 2015/12/4

Y1 - 2015/12/4

N2 - Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

AB - Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

UR - http://www.scopus.com/inward/record.url?scp=84963877868&partnerID=8YFLogxK

U2 - 10.1109/SNW.2014.7348563

DO - 10.1109/SNW.2014.7348563

M3 - Conference article in proceedings

AN - SCOPUS:84963877868

T3 - IEEE Silicon Nanoelectronics Workshop

BT - Silicon Nanoelectronics Workshop, SNW 2014

PB - IEEE

T2 - IEEE Silicon Nanoelectronics Workshop

Y2 - 8 June 2014 through 9 June 2014

ER -

A silicon single-electron pump with tunable electrostatic confinement

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