A scheme to improve PCE of differential-drive CMOS rectifier for low RF input power
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Abstract
In this paper, a scheme to improve power conversion efficiency (PCE) of differential-drive CMOS rectifier for low RF input power is proposed. Auxiliary transistors are utilized to provide forward body biasing for the primary transistors of the rectifier. As a result, the threshold voltages of the primary transistors are reduced. Hence, higher PCE is achieved for lower RF input power. The circuits are designed in a standard 180 nm CMOS technology. Measurement results exhibit a considerable PCE improvement by the proposed design at the RF input frequency of 916 MHz in the three-stage configuration. For 50 K(Formula presented.) resistive load, the proposed rectifier has a maximum 10.9 % PCE improvement and requires 2 dB less RF input power to achieve the comparable peak PCE.
Details
| Original language | English |
|---|---|
| Pages (from-to) | 113-124 |
| Number of pages | 12 |
| Journal | Analog Integrated Circuits and Signal Processing |
| Volume | 90 |
| Issue number | 1 |
| Early online date | 30 Jul 2016 |
| Publication status | Published - Jan 2017 |
| MoE publication type | A1 Journal article-refereed |
- CMOS rectifier, Differential-drive rectifier, Forward body biasing, Low RF input power, Power conversion efficiency
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ID: 6806825
