A Physics-Based Investigation of Pt-Salt Doped Carbon Nanotubes for Local Interconnects

J. Liang*, R. Ramos, J. Dijon, H. Okuno, D. Kalita, D. Renaud, J. Lee, V. P. Georgiev, S. Berrada, T. Sadi, A. Asenov, B. Uhlig, K. Lilienthal, A. Dhavamani, F. Konemann, B. Gotsmann, G. Goncalves, B. Chen, K. Teo, R. R. PandeyA. Todri-Sania

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

7 Citations (Scopus)

Abstract

We investigate, by combining physical and electrical measurements together with an atomistic-to-circuit modeling approach, the conductance of doped carbon nanotubes (CNTs) and their eligibility as possible candidate for next generation back-end-of-line (BEOL) interconnects. Ab-initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical conductance up to 90% by converting semiconducting shells to metallic. Circuit-level simulations predict up to 88% signal delay improvement with doped vs. pristine CNT. Electrical measurements of Pt-salt doped CNTs provide up to 50% of resistance reduction which is a milestone result for future CNT interconnect technology.

Original languageEnglish
Title of host publication2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
PublisherIEEE
Number of pages4
ISBN (Electronic)9781538635599
DOIs
Publication statusPublished - 23 Jan 2018
MoE publication typeA4 Article in a conference publication
EventIEEE International Electron Devices Meeting - San Francisco, United States
Duration: 2 Dec 20176 Dec 2017
Conference number: 63

Publication series

NameIEEE International Electron Devices Meeting
PublisherIEEE
ISSN (Print)2380-9248

Conference

ConferenceIEEE International Electron Devices Meeting
Abbreviated titleIEDM
CountryUnited States
CitySan Francisco
Period02/12/201706/12/2017

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