A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

Research output: Contribution to journalArticleScientificpeer-review

Standard

A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths. / Xue, Hui; Wang, Yadong; Dai, Yunyun; Kim, Wonjae; Jussila, Henri; Qi, Mei; Susoma, Jannatul; Ren, Zhaoyu; Dai, Qing; Zhao, Jianlin; Halonen, Kari; Lipsanen, Harri; Wang, Xiaomu; Gan, Xuetao; Sun, Zhipei.

In: Advanced Functional Materials, Vol. 28, No. 47, 1804388, 21.11.2018.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

APA

Vancouver

Author

Xue, Hui ; Wang, Yadong ; Dai, Yunyun ; Kim, Wonjae ; Jussila, Henri ; Qi, Mei ; Susoma, Jannatul ; Ren, Zhaoyu ; Dai, Qing ; Zhao, Jianlin ; Halonen, Kari ; Lipsanen, Harri ; Wang, Xiaomu ; Gan, Xuetao ; Sun, Zhipei. / A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths. In: Advanced Functional Materials. 2018 ; Vol. 28, No. 47.

Bibtex - Download

@article{a5664f83a243454db66f4f704a50ebac,
title = "A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths",
abstract = "van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.",
keywords = "MoSe, photodetectors, sub-bandgap photodetection, van der Waals heterojunction, WSe",
author = "Hui Xue and Yadong Wang and Yunyun Dai and Wonjae Kim and Henri Jussila and Mei Qi and Jannatul Susoma and Zhaoyu Ren and Qing Dai and Jianlin Zhao and Kari Halonen and Harri Lipsanen and Xiaomu Wang and Xuetao Gan and Zhipei Sun",
year = "2018",
month = "11",
day = "21",
doi = "10.1002/adfm.201804388",
language = "English",
volume = "28",
journal = "Advanced Functional Materials",
issn = "1616-301X",
number = "47",

}

RIS - Download

TY - JOUR

T1 - A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

AU - Xue, Hui

AU - Wang, Yadong

AU - Dai, Yunyun

AU - Kim, Wonjae

AU - Jussila, Henri

AU - Qi, Mei

AU - Susoma, Jannatul

AU - Ren, Zhaoyu

AU - Dai, Qing

AU - Zhao, Jianlin

AU - Halonen, Kari

AU - Lipsanen, Harri

AU - Wang, Xiaomu

AU - Gan, Xuetao

AU - Sun, Zhipei

PY - 2018/11/21

Y1 - 2018/11/21

N2 - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

AB - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

KW - MoSe

KW - photodetectors

KW - sub-bandgap photodetection

KW - van der Waals heterojunction

KW - WSe

UR - http://www.scopus.com/inward/record.url?scp=85054586217&partnerID=8YFLogxK

U2 - 10.1002/adfm.201804388

DO - 10.1002/adfm.201804388

M3 - Article

VL - 28

JO - Advanced Functional Materials

T2 - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 47

M1 - 1804388

ER -

ID: 28771640