A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Article number1804388
JournalAdvanced Functional Materials
Volume28
Issue number47
Early online date1 Jan 2018
Publication statusPublished - 21 Nov 2018
MoE publication typeA1 Journal article-refereed

Researchers

Research units

  • Northwestern Polytechnical University Xian
  • VTT Technical Research Centre of Finland
  • Northwest University China
  • National Center for Nanoscience and Technology Beijing
  • Nanjing University

Abstract

van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

    Research areas

  • MoSe, photodetectors, sub-bandgap photodetection, van der Waals heterojunction, WSe

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