A linearized 2-GHz SiGe low noise amplifier for direct conversion receiver

Jouni Kaukovuori*, Mikko Hotti, Jussi Ryynänen, J. Jussila, Kari Halonen

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    A 2-GHz low noise amplifier (LNA) with optional dual bias feed (DBF) linearization circuit was studied and implemented. The operation of the DBF circuit is described in details and an analytical formula for the extra base current supplied by the DBF is derived in this paper. Simulation results show that the DBF circuit improves ICP and IIP3 by 6.5 dB and 7 dB, respectively. The circuit was fabricated using a 0.35 - μm 45-GHz fr SiGe BiCMOS technology.

    Original languageEnglish
    Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
    Pages200-203
    Volume2
    Publication statusPublished - 2003
    MoE publication typeA4 Article in a conference publication
    EventIEEE International Symposium on Circuits and Systems - Bangkok, Thailand
    Duration: 25 May 200328 May 2003

    Conference

    ConferenceIEEE International Symposium on Circuits and Systems
    Abbreviated titleISCAS
    CountryThailand
    CityBangkok
    Period25/05/200328/05/2003

    Keywords

    • BiCMOS
    • direct conversion
    • low noise amplifier
    • radio receiver

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