A kilobyte rewritable atomic memory

F. E. Kalff, M. P. Rebergen, E. Fahrenfort, J. Girovsky, R. Toskovic, J. L. Lado, J. Fernández-Rossier, A. F. Otte*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

74 Citations (Scopus)

Abstract

The advent of devices based on single dopants, such as the single-atom transistor, the single-spin magnetometer and the single-atom memory, has motivated the quest for strategies that permit the control of matter with atomic precision. Manipulation of individual atoms by lowerature scanning tunnelling microscopy provides ways to store data in atoms, encoded either into their charge state, magnetization state or lattice position. A clear challenge now is the controlled integration of these individual functional atoms into extended, scalable atomic circuits. Here, we present a robust digital atomic-scale memory of up to 1kilobyte (8,000bits) using an array of individual surface vacancies in a chlorine-terminated Cu(100) surface. The memory can be read and rewritten automatically by means of atomic-scale markers and offers an areal density of 502terabits per square inch, outperforming state-of-the-art hard disk drives by three orders of magnitude. Furthermore, the chlorine vacancies are found to be stable at temperatures up to 77K, offering the potential for expanding large-scale atomic assembly towards ambient conditions.

Original languageEnglish
Pages (from-to)926-929
Number of pages4
JournalNature Nanotechnology
Volume11
Issue number11
DOIs
Publication statusPublished - 1 Nov 2016
MoE publication typeA1 Journal article-refereed

Fingerprint Dive into the research topics of 'A kilobyte rewritable atomic memory'. Together they form a unique fingerprint.

Cite this