# A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

Ravindra Singh Pokharia, Ritam Sarkar, Shivam Singh, Swarup Deb, Sami Suihkonen, Jori Lemettinen, Subhabrata Dhar, Dinesh Kabra, Apurba Laha*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

## Abstract

In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence of thermionic field emission (TFE) and Poole-Frenkel (PF) mechanisms on the current transport of the PD has been analyzed. Conduction due to the TFE mechanism dominates in the moderate electric fields (1.25 kV/cm ${ < }{E} < 10$ kV/cm), while the influence of PF is prominent at higher electric fields. A bulk trap energy level of 0.374 eV is obtained with PF conduction analysis. A high responsivity of 33.3 A/W at 15 V with a 362-nm incident wavelength has been achieved in the presence of an internal gain. The internal gain of the PD is also assisted by TFE and PF mechanisms. The PD exhibits a low dark current of 4.7 nA as well as high detectivity of $4.6\times 10^{12}$ Jones at the abovementioned bias. The demonstrated robustness and high performance show the promise of III-nitride PDs for commercial applications.

Original language English 9423875 2796-2803 8 IEEE Transactions on Electron Devices 68 6 https://doi.org/10.1109/TED.2021.3073650 Published - Jun 2021 A1 Journal article-refereed

## Keywords

• Dark current analysis
• gallium nitride (GaN) on Si
• Poole-Frenkel (PF)
• responsivity
• thermionic field emission (TFE)
• ultraviolet (UV) photodetectors (PDs)

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Suihkonen, S. & Kim, I.

01/09/201931/08/2021

Project: Academy of Finland: Other research funding