A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

Ravindra Singh Pokharia, Ritam Sarkar, Shivam Singh, Swarup Deb, Sami Suihkonen, Jori Lemettinen, Subhabrata Dhar, Dinesh Kabra, Apurba Laha*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)


In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence of thermionic field emission (TFE) and Poole-Frenkel (PF) mechanisms on the current transport of the PD has been analyzed. Conduction due to the TFE mechanism dominates in the moderate electric fields (1.25 kV/cm ${ < }{E} < 10$ kV/cm), while the influence of PF is prominent at higher electric fields. A bulk trap energy level of 0.374 eV is obtained with PF conduction analysis. A high responsivity of 33.3 A/W at 15 V with a 362-nm incident wavelength has been achieved in the presence of an internal gain. The internal gain of the PD is also assisted by TFE and PF mechanisms. The PD exhibits a low dark current of 4.7 nA as well as high detectivity of $4.6\times 10^{12}$ Jones at the abovementioned bias. The demonstrated robustness and high performance show the promise of III-nitride PDs for commercial applications.

Original languageEnglish
Article number9423875
Pages (from-to)2796-2803
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - Jun 2021
MoE publication typeA1 Journal article-refereed


  • Dark current analysis
  • gallium nitride (GaN) on Si
  • Poole-Frenkel (PF)
  • responsivity
  • thermionic field emission (TFE)
  • ultraviolet (UV) photodetectors (PDs)


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