A dual-band RF front-end for WCDMA and GSM applications

J. Ryynänen; K. Kivekäs; Jaakko Jussila; A. Pärssinen; K. Halonen

doi:10.1109/4.938370

A dual-band RF front-end for WCDMA and GSM applications

J. Ryynänen^*, K. Kivekäs, Jaakko Jussila, A. Pärssinen, K. Halonen

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

117 Citations (Scopus)

Abstract

An RF front-end for dual-band dual-mode operation is presented. The front-end consumes 22.5 mW from a 1.8-V supply and is designed to be used in a direct-conversion WCDMA and GSM receiver. The front-end has been fabricated in a 0.35-μm BiCMOS process and, in both modes, can use the same devices in the signal path except the LNA input transistors. The front-end has a 27-dB gain control range, which is divided between the LNA and quadrature mixers. The measured double-sideband noise figure and voltage gain are 2.3 dB, 39.5 dB, for the GSM and 4.3 dB, 33 dB for the WCDMA, respectively. The linearity parameters IIP3 and IIP2 are -19 dBm, +35 dBm for the GSM and -14.5 dBm and +34 dBm for the WCDMA, respectively.

Original language	English
Pages (from-to)	1198-1204
Number of pages	7
Journal	IEEE Journal of Solid-State Circuits
Volume	36
Issue number	8
DOIs	https://doi.org/10.1109/4.938370
Publication status	Published - Aug 2001
MoE publication type	A1 Journal article-refereed

Keywords

BiCMOS analog integrated circuits
Direct conversion
Low noise amplifiers
Mixers
Multimode
Radio receivers

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10.1109/4.938370

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title = "A dual-band RF front-end for WCDMA and GSM applications",

abstract = "An RF front-end for dual-band dual-mode operation is presented. The front-end consumes 22.5 mW from a 1.8-V supply and is designed to be used in a direct-conversion WCDMA and GSM receiver. The front-end has been fabricated in a 0.35-μm BiCMOS process and, in both modes, can use the same devices in the signal path except the LNA input transistors. The front-end has a 27-dB gain control range, which is divided between the LNA and quadrature mixers. The measured double-sideband noise figure and voltage gain are 2.3 dB, 39.5 dB, for the GSM and 4.3 dB, 33 dB for the WCDMA, respectively. The linearity parameters IIP3 and IIP2 are -19 dBm, +35 dBm for the GSM and -14.5 dBm and +34 dBm for the WCDMA, respectively.",

keywords = "BiCMOS analog integrated circuits, Direct conversion, Low noise amplifiers, Mixers, Multimode, Radio receivers",

author = "J. Ryyn{\"a}nen and K. Kivek{\"a}s and Jaakko Jussila and A. P{\"a}rssinen and K. Halonen",

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AU - Kivekäs, K.

AU - Jussila, Jaakko

AU - Pärssinen, A.

AU - Halonen, K.

PY - 2001/8

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N2 - An RF front-end for dual-band dual-mode operation is presented. The front-end consumes 22.5 mW from a 1.8-V supply and is designed to be used in a direct-conversion WCDMA and GSM receiver. The front-end has been fabricated in a 0.35-μm BiCMOS process and, in both modes, can use the same devices in the signal path except the LNA input transistors. The front-end has a 27-dB gain control range, which is divided between the LNA and quadrature mixers. The measured double-sideband noise figure and voltage gain are 2.3 dB, 39.5 dB, for the GSM and 4.3 dB, 33 dB for the WCDMA, respectively. The linearity parameters IIP3 and IIP2 are -19 dBm, +35 dBm for the GSM and -14.5 dBm and +34 dBm for the WCDMA, respectively.

AB - An RF front-end for dual-band dual-mode operation is presented. The front-end consumes 22.5 mW from a 1.8-V supply and is designed to be used in a direct-conversion WCDMA and GSM receiver. The front-end has been fabricated in a 0.35-μm BiCMOS process and, in both modes, can use the same devices in the signal path except the LNA input transistors. The front-end has a 27-dB gain control range, which is divided between the LNA and quadrature mixers. The measured double-sideband noise figure and voltage gain are 2.3 dB, 39.5 dB, for the GSM and 4.3 dB, 33 dB for the WCDMA, respectively. The linearity parameters IIP3 and IIP2 are -19 dBm, +35 dBm for the GSM and -14.5 dBm and +34 dBm for the WCDMA, respectively.

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