A dual-band RF front-end for WCDMA and GSM applications

J. Ryynänen*, K. Kivekäs, Jaakko Jussila, A. Pärssinen, K. Halonen

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    117 Citations (Scopus)

    Abstract

    An RF front-end for dual-band dual-mode operation is presented. The front-end consumes 22.5 mW from a 1.8-V supply and is designed to be used in a direct-conversion WCDMA and GSM receiver. The front-end has been fabricated in a 0.35-μm BiCMOS process and, in both modes, can use the same devices in the signal path except the LNA input transistors. The front-end has a 27-dB gain control range, which is divided between the LNA and quadrature mixers. The measured double-sideband noise figure and voltage gain are 2.3 dB, 39.5 dB, for the GSM and 4.3 dB, 33 dB for the WCDMA, respectively. The linearity parameters IIP3 and IIP2 are -19 dBm, +35 dBm for the GSM and -14.5 dBm and +34 dBm for the WCDMA, respectively.

    Original languageEnglish
    Pages (from-to)1198-1204
    Number of pages7
    JournalIEEE Journal of Solid-State Circuits
    Volume36
    Issue number8
    DOIs
    Publication statusPublished - Aug 2001
    MoE publication typeA1 Journal article-refereed

    Keywords

    • BiCMOS analog integrated circuits
    • Direct conversion
    • Low noise amplifiers
    • Mixers
    • Multimode
    • Radio receivers

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