A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry

T. C. Dos Santos; J. A.C. Gonçalves; M. M. Vasques; C. C.B. Tobias; W. F.P. Neves; C. M.K. Haddad; Jaakko Härkönen

doi:10.1063/1.3608963

A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry

T. C. Dos Santos, J. A.C. Gonçalves, M. M. Vasques^*, C. C.B. Tobias, W. F.P. Neves, C. M.K. Haddad, Jaakko Härkönen

^*Corresponding author for this work

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.

Original language	English
Title of host publication	XXXIII Brazilian Workshop on Nuclear Physics
Pages	228-232
Number of pages	5
Volume	1351
DOIs	https://doi.org/10.1063/1.3608963
Publication status	Published - 2011
MoE publication type	A4 Conference publication
Event	Brazilian Workshop on Nuclear Physics - Campos Do Jordao, Brazil Duration: 7 Sept 2010 → 11 Sept 2010 Conference number: 33

Workshop

Workshop	Brazilian Workshop on Nuclear Physics
Country/Territory	Brazil
City	Campos Do Jordao
Period	07/09/2010 → 11/09/2010

Keywords

dosimetry
electron beam
silicon diodes

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10.1063/1.3608963

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Dos Santos, T. C., Gonçalves, J. A. C., Vasques, M. M., Tobias, C. C. B., Neves, W. F. P., Haddad, C. M. K., & Härkönen, J. (2011). A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry. In XXXIII Brazilian Workshop on Nuclear Physics (Vol. 1351, pp. 228-232) https://doi.org/10.1063/1.3608963

@inproceedings{06d8e5ea63a5440ea8ac6a0c53b46b1c,

title = "A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry",

abstract = "In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.",

keywords = "dosimetry, electron beam, silicon diodes",

author = "{Dos Santos}, {T. C.} and Gon{\c c}alves, {J. A.C.} and Vasques, {M. M.} and Tobias, {C. C.B.} and Neves, {W. F.P.} and Haddad, {C. M.K.} and Jaakko H{\"a}rk{\"o}nen",

year = "2011",

doi = "10.1063/1.3608963",

language = "English",

isbn = "9780735409088",

volume = "1351",

pages = "228--232",

booktitle = "XXXIII Brazilian Workshop on Nuclear Physics",

note = "Brazilian Workshop on Nuclear Physics ; Conference date: 07-09-2010 Through 11-09-2010",

}

Dos Santos, TC, Gonçalves, JAC, Vasques, MM, Tobias, CCB, Neves, WFP, Haddad, CMK & Härkönen, J 2011, A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry. in XXXIII Brazilian Workshop on Nuclear Physics. vol. 1351, pp. 228-232, Brazilian Workshop on Nuclear Physics, Campos Do Jordao, Brazil, 07/09/2010. https://doi.org/10.1063/1.3608963

A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry. / Dos Santos, T. C.; Gonçalves, J. A.C.; Vasques, M. M. et al.
XXXIII Brazilian Workshop on Nuclear Physics. Vol. 1351 2011. p. 228-232.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry

AU - Dos Santos, T. C.

AU - Gonçalves, J. A.C.

AU - Vasques, M. M.

AU - Tobias, C. C.B.

AU - Neves, W. F.P.

AU - Haddad, C. M.K.

AU - Härkönen, Jaakko

N1 - Conference code: 33

PY - 2011

Y1 - 2011

N2 - In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.

AB - In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.

KW - dosimetry

KW - electron beam

KW - silicon diodes

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DO - 10.1063/1.3608963

M3 - Conference article in proceedings

AN - SCOPUS:80052416930

SN - 9780735409088

VL - 1351

SP - 228

EP - 232

BT - XXXIII Brazilian Workshop on Nuclear Physics

T2 - Brazilian Workshop on Nuclear Physics

Y2 - 7 September 2010 through 11 September 2010

ER -

A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry

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