TY - JOUR
T1 - A comparative study of TiN and TiC
T2 - Oxidation resistance and retention of xenon at high temperature and under degraded vacuum
AU - Gavarini, S.
AU - Bes, R.
AU - Millard-Pinard, N.
AU - Cardinal, S.
AU - Peaucelle, C.
AU - Perrat-Mabilon, A.
AU - Garnier, V.
AU - Gaillard, C.
PY - 2011/1/1
Y1 - 2011/1/1
N2 - Dense TiN and TiC samples were prepared by hot pressing using micrometric powders. Xenon species (simulating rare gas fission products) were then implanted into the ceramics. The samples were annealed for 1 h at 1500 °C under several degraded vacuums with PO2 varying from 10-6 to 2(10-4 mbars. The oxidation resistance of the samples and their retention properties with respect to preimplanted xenon species were analyzed using scanning electron microscopy, grazing incidence x-ray diffraction, Rutherford backscattering spectrometry, and nuclear backscattering spectrometry. Results indicate that TiC is resistant to oxidation and does not release xenon for PO2<6×10-6 mbars. When PO2 increases, geometric oxide crystallites appear at the surface depending on the orientation and size of TiC grains. These oxide phases are Ti2O3, Ti3O5, and TiO2. Apparition of oxide crystallites is associated with the beginning of xenon release. TiC surface is completely covered by the oxide phases at PO2 =2×10 -4 mbars up to a depth of 3 μm and the xenon is then completely released. For TiN samples, the results show a progressive apparition of oxide crystallites (Ti3O5 mainly) at the surface when PO 2 increases. The presence of the oxide crystallites is also directly correlated with xenon release, the more oxide crystallites are growing the more xenon is released. TiN surface is completely covered by an oxide layer at PO2 =2times;10-4 mbars up to 1 μm. A correlation between the initial fine microstructure of TiN and the properties of the growing layer is suggested.
AB - Dense TiN and TiC samples were prepared by hot pressing using micrometric powders. Xenon species (simulating rare gas fission products) were then implanted into the ceramics. The samples were annealed for 1 h at 1500 °C under several degraded vacuums with PO2 varying from 10-6 to 2(10-4 mbars. The oxidation resistance of the samples and their retention properties with respect to preimplanted xenon species were analyzed using scanning electron microscopy, grazing incidence x-ray diffraction, Rutherford backscattering spectrometry, and nuclear backscattering spectrometry. Results indicate that TiC is resistant to oxidation and does not release xenon for PO2<6×10-6 mbars. When PO2 increases, geometric oxide crystallites appear at the surface depending on the orientation and size of TiC grains. These oxide phases are Ti2O3, Ti3O5, and TiO2. Apparition of oxide crystallites is associated with the beginning of xenon release. TiC surface is completely covered by the oxide phases at PO2 =2×10 -4 mbars up to a depth of 3 μm and the xenon is then completely released. For TiN samples, the results show a progressive apparition of oxide crystallites (Ti3O5 mainly) at the surface when PO 2 increases. The presence of the oxide crystallites is also directly correlated with xenon release, the more oxide crystallites are growing the more xenon is released. TiN surface is completely covered by an oxide layer at PO2 =2times;10-4 mbars up to 1 μm. A correlation between the initial fine microstructure of TiN and the properties of the growing layer is suggested.
UR - http://www.scopus.com/inward/record.url?scp=78751498960&partnerID=8YFLogxK
U2 - 10.1063/1.3524267
DO - 10.1063/1.3524267
M3 - Article
AN - SCOPUS:78751498960
SN - 0021-8979
VL - 109
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 1
M1 - 014906
ER -