A Compact Untrimmed 48ppm/°C All MOS Current Reference Circuit

Dipesh C. Monga; Kari Halonen

doi:10.1109/MWSCAS54063.2022.9859347

A Compact Untrimmed 48ppm/°C All MOS Current Reference Circuit

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

117 Downloads (Pure)

Abstract

An ultra-low power and low-cost (area efficient) nano-Ampere current reference circuit designed in a 65 nm technology is presented in this paper: The proposed circuit is a resistorless beta multiplier current reference circuit that uses self cascode composite MOSFETs in triode region. Circuit analysis has been discussed in the paper. The simulated circuit consumes power of 550 nW at a nominal operating voltage of 1.33 V and occupies area of 0.0031 mm2. The design provides a line regulation of 1.9 %/V over an operating voltage range of 1.25 V to 1.4 V. Temperature coefficient (TC) of the circuit at nominal voltage of 1.33 V is 48 ppm/°C for a wide temperature range of-40°C to 85°C. Output current of the circuit at nominal voltage is 104.2 nA with a small process variation of only 4 %.

Original language	English
Title of host publication	MWSCAS 2022 - 65th IEEE International Midwest Symposium on Circuits and Systems, Proceedings
Publisher	IEEE
Number of pages	5
ISBN (Electronic)	978-1-6654-0279-8
DOIs	https://doi.org/10.1109/MWSCAS54063.2022.9859347
Publication status	Published - 2022
MoE publication type	A4 Conference publication
Event	International Midwest Symposium on Circuits and Systems - Fukuoka, Japan Duration: 7 Aug 2022 → 10 Aug 2022 Conference number: 65

Publication series

Name	Conference proceedings : Midwest Symposium on Circuits and Systems
ISSN (Print)	1548-3746
ISSN (Electronic)	1558-3899

Conference

Conference	International Midwest Symposium on Circuits and Systems
Abbreviated title	MWSCAS
Country/Territory	Japan
City	Fukuoka
Period	07/08/2022 → 10/08/2022

Keywords

CMOS beta multiplier
Current reference
low temperature coefficient
low-power
self-cascode transistor

Access to Document

10.1109/MWSCAS54063.2022.9859347

Dipesh_A_Compact_Untrimmed_48ppmAccepted author manuscript, 1.59 MB

Cite this

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title = "A Compact Untrimmed 48ppm/°C All MOS Current Reference Circuit",

abstract = "An ultra-low power and low-cost (area efficient) nano-Ampere current reference circuit designed in a 65 nm technology is presented in this paper: The proposed circuit is a resistorless beta multiplier current reference circuit that uses self cascode composite MOSFETs in triode region. Circuit analysis has been discussed in the paper. The simulated circuit consumes power of 550 nW at a nominal operating voltage of 1.33 V and occupies area of 0.0031 mm2. The design provides a line regulation of 1.9 %/V over an operating voltage range of 1.25 V to 1.4 V. Temperature coefficient (TC) of the circuit at nominal voltage of 1.33 V is 48 ppm/°C for a wide temperature range of-40°C to 85°C. Output current of the circuit at nominal voltage is 104.2 nA with a small process variation of only 4 %.",

keywords = "CMOS beta multiplier, Current reference, low temperature coefficient, low-power, self-cascode transistor",

author = "Monga, {Dipesh C.} and Kari Halonen",

note = "Funding Information: The authors are grateful to Academy of Finland for funding this work under the project EHIR (Wireless impulse radio data link powered by energy harvesting). Publisher Copyright: {\textcopyright} 2022 IEEE.; International Midwest Symposium on Circuits and Systems, MWSCAS ; Conference date: 07-08-2022 Through 10-08-2022",

year = "2022",

doi = "10.1109/MWSCAS54063.2022.9859347",

language = "English",

series = "Conference proceedings : Midwest Symposium on Circuits and Systems",

publisher = "IEEE",

booktitle = "MWSCAS 2022 - 65th IEEE International Midwest Symposium on Circuits and Systems, Proceedings",

address = "United States",

}

Monga, DC & Halonen, K 2022, A Compact Untrimmed 48ppm/°C All MOS Current Reference Circuit. in MWSCAS 2022 - 65th IEEE International Midwest Symposium on Circuits and Systems, Proceedings. Conference proceedings : Midwest Symposium on Circuits and Systems, IEEE, International Midwest Symposium on Circuits and Systems, Fukuoka, Japan, 07/08/2022. https://doi.org/10.1109/MWSCAS54063.2022.9859347

A Compact Untrimmed 48ppm/°C All MOS Current Reference Circuit. / Monga, Dipesh C.; Halonen, Kari.
MWSCAS 2022 - 65th IEEE International Midwest Symposium on Circuits and Systems, Proceedings. IEEE, 2022. (Conference proceedings : Midwest Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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PY - 2022

Y1 - 2022

N2 - An ultra-low power and low-cost (area efficient) nano-Ampere current reference circuit designed in a 65 nm technology is presented in this paper: The proposed circuit is a resistorless beta multiplier current reference circuit that uses self cascode composite MOSFETs in triode region. Circuit analysis has been discussed in the paper. The simulated circuit consumes power of 550 nW at a nominal operating voltage of 1.33 V and occupies area of 0.0031 mm2. The design provides a line regulation of 1.9 %/V over an operating voltage range of 1.25 V to 1.4 V. Temperature coefficient (TC) of the circuit at nominal voltage of 1.33 V is 48 ppm/°C for a wide temperature range of-40°C to 85°C. Output current of the circuit at nominal voltage is 104.2 nA with a small process variation of only 4 %.

AB - An ultra-low power and low-cost (area efficient) nano-Ampere current reference circuit designed in a 65 nm technology is presented in this paper: The proposed circuit is a resistorless beta multiplier current reference circuit that uses self cascode composite MOSFETs in triode region. Circuit analysis has been discussed in the paper. The simulated circuit consumes power of 550 nW at a nominal operating voltage of 1.33 V and occupies area of 0.0031 mm2. The design provides a line regulation of 1.9 %/V over an operating voltage range of 1.25 V to 1.4 V. Temperature coefficient (TC) of the circuit at nominal voltage of 1.33 V is 48 ppm/°C for a wide temperature range of-40°C to 85°C. Output current of the circuit at nominal voltage is 104.2 nA with a small process variation of only 4 %.

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KW - low temperature coefficient

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KW - self-cascode transistor

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ER -

A Compact Untrimmed 48ppm/°C All MOS Current Reference Circuit

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

EHIR: Wireless impulse radio data link powered by energy harvesting

Cite this

A Compact Untrimmed 48ppm/°C All MOS Current Reference Circuit

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

EHIR: Wireless impulse radio data link powered by energy harvesting

Cite this