A compact low-power 140-GHz low-noise amplifier with 19-dB gain and 7-dB NF

Kaisa Ryynänen*, Kari Stadius, Andreas Hammer, Mikko Varonen, Henrik Forsten, Tero Kiuru, Ville Viikari, Jussi Ryynänen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

This paper describes the design of a 140-GHz low-noise amplifier in 130-nm SiGe BiCMOS technology. The circuit is aimed for a high integration-density imaging radiometer, where several receivers are integrated on the same die. Thus, we particularly focus on minimizing the die area and power consumption. The two-stage amplifier is composed of cascode stages with gain boosting base resonators. The performance of a single cascode stage is optimized by correctly sizing the base resonator to avoid instability and optimizing the compact transistor layout without typically used interstage matching between the cascode stages. The circuit features gain of 19 dB at 140 GHz, and noise figure of 7 dB, while consuming only 15 mW with the supply voltage of 2 V and occupying a die area of 0.1 mm2

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings
PublisherIEEE
ISBN (Electronic)9781728192017
DOIs
Publication statusPublished - 2021
MoE publication typeA4 Article in a conference publication
EventIEEE International Symposium on Circuits and Systems - Daegu, Korea, Republic of
Duration: 22 May 202128 May 2021
Conference number: 53

Publication series

NameIEEE International Symposium on Circuits and Systems proceedings
ISSN (Print)0271-4302
ISSN (Electronic)2158-1525

Conference

ConferenceIEEE International Symposium on Circuits and Systems
Abbreviated titleISCAS
CountryKorea, Republic of
CityDaegu
Period22/05/202128/05/2021

Keywords

  • BiCMOS
  • HBT
  • Low-noise amplifier
  • Phased array
  • Radiometer
  • SiGe

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