A 6–20 GHz 400-MHz Modulation-Bandwidth CMOS Transmitter IC

Ali Raza Saleem; Saeed Naghavi; Mahwish Zahra; Kari Stadius; Marko Kosunen; Lauri Anttila; Mikko Valkama; Jussi Ryynänen

doi:10.1109/ICECS202256217.2022.9971005

A 6–20 GHz 400-MHz Modulation-Bandwidth CMOS Transmitter IC

Ali Raza Saleem, Saeed Naghavi, Mahwish Zahra, Kari Stadius, Marko Kosunen, Lauri Anttila, Mikko Valkama, Jussi Ryynänen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

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Abstract

This paper presents a transmitter IC with two identical signal paths, including base-band amplifier, up-converting mixer, and power amplifier (PA) stages. The design is focused on wide modulation bandwidth, and the use of a resonatorless small die-area class-D power amplifier at cm-wave frequencies. This work also incorporates a local oscillator (LO) signal distribution network with phase tuning elements. The circuit is implemented in a 22-nm CMOS process, and the active die area is 0.8 mm2. Operation over the 6–20 GHz range of carrier frequencies through the transmission of both continuous wave (CW) and wideband quadrature phase shift keying (QPSK) modulated signals were verified with measurements. Results with 20/40/100, and 400 MHz modulation bandwidths are presented, and for instance for a 20-MHz QPSK modulated input signal the measured adjacent channel leakage ratio (ACLR) of the transmitter is 28 dBc and error vector magnitude (EVM) is 5%.

Original language	English
Title of host publication	2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-6654-8823-5
ISBN (Print)	978-1-6654-8824-2
DOIs	https://doi.org/10.1109/ICECS202256217.2022.9971005
Publication status	Published - 26 Oct 2022
MoE publication type	A4 Article in a conference publication
Event	IEEE International Conference on Electronics, Circuits and Systems - Glasgow, United Kingdom Duration: 24 Oct 2022 → 26 Oct 2022 Conference number: 29

Conference

Conference	IEEE International Conference on Electronics, Circuits and Systems
Abbreviated title	ICECS
Country/Territory	United Kingdom
City	Glasgow
Period	24/10/2022 → 26/10/2022

Keywords

Semiconductor device measurement
Phase measurement
Transmitters
Power amplifiers
Resonant frequency
Frequency measurement
Wideband

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10.1109/ICECS202256217.2022.9971005

Saleem_6-20-Ghz_400-mhzAccepted author manuscript, 1.05 MB

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@inproceedings{a87500344ad24e29b858e393f3b5945e,

title = "A 6–20 GHz 400-MHz Modulation-Bandwidth CMOS Transmitter IC",

abstract = "This paper presents a transmitter IC with two identical signal paths, including base-band amplifier, up-converting mixer, and power amplifier (PA) stages. The design is focused on wide modulation bandwidth, and the use of a resonatorless small die-area class-D power amplifier at cm-wave frequencies. This work also incorporates a local oscillator (LO) signal distribution network with phase tuning elements. The circuit is implemented in a 22-nm CMOS process, and the active die area is 0.8 mm2. Operation over the 6–20 GHz range of carrier frequencies through the transmission of both continuous wave (CW) and wideband quadrature phase shift keying (QPSK) modulated signals were verified with measurements. Results with 20/40/100, and 400 MHz modulation bandwidths are presented, and for instance for a 20-MHz QPSK modulated input signal the measured adjacent channel leakage ratio (ACLR) of the transmitter is 28 dBc and error vector magnitude (EVM) is 5%.",

keywords = "Semiconductor device measurement, Phase measurement, Transmitters, Power amplifiers, Resonant frequency, Frequency measurement, Wideband",

author = "Saleem, {Ali Raza} and Saeed Naghavi and Mahwish Zahra and Kari Stadius and Marko Kosunen and Lauri Anttila and Mikko Valkama and Jussi Ryyn{\"a}nen",

year = "2022",

month = oct,

day = "26",

doi = "10.1109/ICECS202256217.2022.9971005",

language = "English",

isbn = "978-1-6654-8824-2",

pages = "1--4",

booktitle = "2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)",

publisher = "IEEE",

address = "United States",

note = "IEEE International Conference on Electronics, Circuits and Systems, ICECS ; Conference date: 24-10-2022 Through 26-10-2022",

}

Saleem, AR, Naghavi, S, Zahra, M, Stadius, K , Kosunen, M, Anttila, L, Valkama, M & Ryynänen, J 2022, A 6–20 GHz 400-MHz Modulation-Bandwidth CMOS Transmitter IC. in 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)., 9971005, IEEE, pp. 1-4, IEEE International Conference on Electronics, Circuits and Systems, Glasgow, United Kingdom, 24/10/2022. https://doi.org/10.1109/ICECS202256217.2022.9971005

TY - GEN

T1 - A 6–20 GHz 400-MHz Modulation-Bandwidth CMOS Transmitter IC

AU - Saleem, Ali Raza

AU - Naghavi, Saeed

AU - Zahra, Mahwish

AU - Stadius, Kari

AU - Kosunen, Marko

AU - Anttila, Lauri

AU - Valkama, Mikko

AU - Ryynänen, Jussi

N1 - Conference code: 29

PY - 2022/10/26

Y1 - 2022/10/26

N2 - This paper presents a transmitter IC with two identical signal paths, including base-band amplifier, up-converting mixer, and power amplifier (PA) stages. The design is focused on wide modulation bandwidth, and the use of a resonatorless small die-area class-D power amplifier at cm-wave frequencies. This work also incorporates a local oscillator (LO) signal distribution network with phase tuning elements. The circuit is implemented in a 22-nm CMOS process, and the active die area is 0.8 mm2. Operation over the 6–20 GHz range of carrier frequencies through the transmission of both continuous wave (CW) and wideband quadrature phase shift keying (QPSK) modulated signals were verified with measurements. Results with 20/40/100, and 400 MHz modulation bandwidths are presented, and for instance for a 20-MHz QPSK modulated input signal the measured adjacent channel leakage ratio (ACLR) of the transmitter is 28 dBc and error vector magnitude (EVM) is 5%.

AB - This paper presents a transmitter IC with two identical signal paths, including base-band amplifier, up-converting mixer, and power amplifier (PA) stages. The design is focused on wide modulation bandwidth, and the use of a resonatorless small die-area class-D power amplifier at cm-wave frequencies. This work also incorporates a local oscillator (LO) signal distribution network with phase tuning elements. The circuit is implemented in a 22-nm CMOS process, and the active die area is 0.8 mm2. Operation over the 6–20 GHz range of carrier frequencies through the transmission of both continuous wave (CW) and wideband quadrature phase shift keying (QPSK) modulated signals were verified with measurements. Results with 20/40/100, and 400 MHz modulation bandwidths are presented, and for instance for a 20-MHz QPSK modulated input signal the measured adjacent channel leakage ratio (ACLR) of the transmitter is 28 dBc and error vector magnitude (EVM) is 5%.

KW - Semiconductor device measurement

KW - Phase measurement

KW - Transmitters

KW - Power amplifiers

KW - Resonant frequency

KW - Frequency measurement

KW - Wideband

UR - http://www.scopus.com/inward/record.url?scp=85145353180&partnerID=8YFLogxK

U2 - 10.1109/ICECS202256217.2022.9971005

DO - 10.1109/ICECS202256217.2022.9971005

M3 - Conference contribution

SN - 978-1-6654-8824-2

SP - 1

EP - 4

BT - 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)

PB - IEEE

T2 - IEEE International Conference on Electronics, Circuits and Systems

Y2 - 24 October 2022 through 26 October 2022

ER -

A 6–20 GHz 400-MHz Modulation-Bandwidth CMOS Transmitter IC

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