A 53-117 GHz LNA in 28-nm FDSOI CMOS
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This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.
|Number of pages||3|
|Journal||IEEE Microwave and Wireless Components Letters|
|Publication status||Published - 1 Feb 2017|
|MoE publication type||A1 Journal article-refereed|
- Amplifier, broadband amplifiers, CMOS, LNA, millimeter-wave integrated circuits, W-band