A 53-117 GHz LNA in 28-nm FDSOI CMOS

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Denizhan Karaca
  • Mikko Varonen
  • Dristy Parveg
  • Ali Vahdati
  • Kari Halonen

Research units

Abstract

This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.

Details

Original languageEnglish
Article number7837635
Pages (from-to)171-173
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume27
Issue number2
Publication statusPublished - 1 Feb 2017
MoE publication typeA1 Journal article-refereed

    Research areas

  • Amplifier, broadband amplifiers, CMOS, LNA, millimeter-wave integrated circuits, W-band

ID: 11423987