Abstract
In this work, an ultra low power all-MOSFET based current reference circuit, developed in 0.18 µm CMOS technology, is presented. The proposed circuit is based on the classical resistor-less beta multiplier circuit with an additional temperature compensation feature. The circuit is capable of providing the reference current in a nanoampere range for the supply voltage ranging from 1 V to 2 V in the industrial temperature range of −40 °C to 85 °C. The measurements were performed on 10 prototypes. The measured mean value of the reference current is 58.7 nA with a mean temperature coefficient value of 30 ppm/°C. In addition, the measured mean line regulation is 3.4%/V in the given supply voltage range. The total current consumption of the circuit is 352 nA and the chip area is 0.036 mm2.
Original language | English |
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Pages (from-to) | 45-52 |
Number of pages | 8 |
Journal | Microelectronics Journal |
Volume | 69 |
DOIs | |
Publication status | Published - 1 Nov 2017 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Beta multiplier
- Current reference circuit
- IoT
- Nanoampere
- Reference circuits
- Temperature
- Ultra low power