A 139 nW, 67 ppm / C BJT-CMOS-Based Voltage Reference Circuit

Shailesh Singh Chouhan*, Kari Halonen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

In this work, a low-power voltage reference circuit has been developed using the principle that a thermal compensation of the threshold voltage of a diode-connected nMOSFET can be obtained by using the PTAT current. The proposed circuit is designed using 0.18μm standard CMOS technology for the industrial temperature range of - 40 to +85∘C. The measurements have been done over a set of 10 samples in the given temperature range. The measured results show that the proposed circuit is capable of working in the supply voltage range of 1.2–1.8 V with the mean line sensitivity and total current consumption of 0.64%/V and 115.4nA, respectively, at 22.5∘C. The measured mean reference voltage obtained from the circuit is 435 mV with the mean temperature coefficient of 67ppm/∘C. The measured noise density at 22.5∘C without any filtering capacitor is 42μV/Hz at 100 Hz. The active area of the circuit is 0.01008mm2.

Original languageEnglish
Pages (from-to)5062-5078
Number of pages17
JournalCircuits, Systems, and Signal Processing
Volume36
Issue number12
DOIs
Publication statusPublished - 1 Dec 2017
MoE publication typeA1 Journal article-refereed

Keywords

  • BJT
  • CMOS
  • Energy harvesting
  • IoT
  • Low power
  • Voltage reference

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