A 0.67-μW 177-ppm/°C All-MOS Current Reference Circuit in a 0.18-μm CMOS Technology

Shailesh Singh Chouhan, Kari Halonen

Research output: Contribution to journalArticleScientificpeer-review

25 Citations (Scopus)

Abstract

This brief describes a nanopower current reference circuit that has been fabricated in a standard 0.18- μm CMOS technology. The proposed circuit is an extension of the resistorless current reference circuit suggested by Oguey and Aebischer. This extension is a simple circuit arrangement that is capable of reducing the temperature coefficient (TC) of Oguey's circuit. The measurements have been done on ten prototypes in the temperature range of -40 °C to +85 °C. The measured average reference current is 92.2 nA with the average TC value of 177 ppm/°C. The measured average reduction of ≈68% has been achieved in TC value of Oguey's circuit after implementing the proposed arrangement. The operating supply voltage for the proposed circuit ranges from 1.25 to 1.8 V with the line sensitivity of 7.5%/V. The measured maximum average power dissipation of the proposed current reference circuit is 0.67 μW at the supply voltage of 1.8 V.

Original languageEnglish
Article number7410018
Pages (from-to)723-727
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume63
Issue number8
DOIs
Publication statusPublished - 1 Aug 2016
MoE publication typeA1 Journal article-refereed

Keywords

  • All-MOS implementation
  • low power
  • low temperature coefficient (TC)
  • low voltage
  • nanoampere current reference

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