250 GHz SiGe SPDT Resonator Switch

Yehia Tawfik; Ahamed Raju; Mikko Varonen; Md Najmussadat; Kari A.I. Halonen

250 GHz SiGe SPDT Resonator Switch

Yehia Tawfik^*, Ahamed Raju, Mikko Varonen, Md Najmussadat, Kari A.I. Halonen

^*Corresponding author for this work

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

Abstract

This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.

Original language	English
Title of host publication	EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
Publisher	IEEE
Pages	289-291
Number of pages	3
ISBN (Electronic)	978-2-87487-060-6
ISBN (Print)	978-1-7281-7040-4
Publication status	Published - 10 Jan 2021
MoE publication type	A4 Conference publication
Event	European Microwave Integrated Circuits Conference - Utrecht, Netherlands Duration: 11 Jan 2021 → 12 Jan 2021 Conference number: 15

Conference

Conference	European Microwave Integrated Circuits Conference
Abbreviated title	EuMIC
Country/Territory	Netherlands
City	Utrecht
Period	11/01/2021 → 12/01/2021

Keywords

250GHz
millimeter-wave
reverse-saturation
SiGe
Silicon-Germanium
SPDT

Access to Document

https://ieeexplore.ieee.org/document/9337419

Cite this

@inproceedings{401780e39cc34028b9883c07e256807a,

title = "250 GHz SiGe SPDT Resonator Switch",

abstract = "This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.",

keywords = "250GHz, millimeter-wave, reverse-saturation, SiGe, Silicon-Germanium, SPDT",

author = "Yehia Tawfik and Ahamed Raju and Mikko Varonen and Md Najmussadat and Halonen, {Kari A.I.}",

year = "2021",

month = jan,

day = "10",

language = "English",

isbn = "978-1-7281-7040-4",

pages = "289--291",

booktitle = "EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

note = "European Microwave Integrated Circuits Conference, EuMIC ; Conference date: 11-01-2021 Through 12-01-2021",

}

TY - GEN

T1 - 250 GHz SiGe SPDT Resonator Switch

AU - Tawfik, Yehia

AU - Raju, Ahamed

AU - Varonen, Mikko

AU - Najmussadat, Md

AU - Halonen, Kari A.I.

N1 - Conference code: 15

PY - 2021/1/10

Y1 - 2021/1/10

N2 - This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.

AB - This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.

KW - 250GHz

KW - millimeter-wave

KW - reverse-saturation

KW - SiGe

KW - Silicon-Germanium

KW - SPDT

UR - http://www.scopus.com/inward/record.url?scp=85100914624&partnerID=8YFLogxK

M3 - Conference article in proceedings

AN - SCOPUS:85100914624

SN - 978-1-7281-7040-4

SP - 289

EP - 291

BT - EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - European Microwave Integrated Circuits Conference

Y2 - 11 January 2021 through 12 January 2021

ER -

250 GHz SiGe SPDT Resonator Switch

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

TeraCom: Wafer Level Integrated THz Communication Link

MilliRAD: Compact Millimeter-wave Radiometers

Cite this

250 GHz SiGe SPDT Resonator Switch

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

TeraCom: Wafer Level Integrated THz Communication Link

MilliRAD: Compact Millimeter-wave Radiometers

Cite this