250 GHz SiGe SPDT Resonator Switch

Yehia Tawfik*, Ahamed Raju, Mikko Varonen, Md Najmussadat, Kari A.I. Halonen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.

Original languageEnglish
Title of host publicationEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
PublisherIEEE
Pages289-291
Number of pages3
ISBN (Electronic)9782874870606
Publication statusPublished - 10 Jan 2021
MoE publication typeA4 Article in a conference publication
EventEuropean Microwave Integrated Circuits Conference - Utrecht, Netherlands
Duration: 11 Jan 202112 Jan 2021
Conference number: 15

Conference

ConferenceEuropean Microwave Integrated Circuits Conference
Abbreviated titleEuMIC
CountryNetherlands
CityUtrecht
Period11/01/202112/01/2021

Keywords

  • 250GHz
  • millimeter-wave
  • reverse-saturation
  • SiGe
  • Silicon-Germanium
  • SPDT

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