N-polar wide band gap nitride materials and devices for future energy efficient ICT

Project Details


The main objective of this project is the development of innovative key enabling technologies for future energy efficient ICT, more precisely RF power transistors based on N-polar III-nitride semiconductors. The development of these devices requires optimization of materials synthesis processes as well as novel device designs. The most important features, such as defects, limiting the functionality of the developed devices will be identified and novel processing routes for their removal or for mitigation of their harmful effects will be uncovered. These challenging developments will allow major breakthroughs in deploying novel energy-efficient technologies for ICT without compromising the network performance.
Short titleDefame_cost2
Effective start/end date01/09/201931/08/2021