Complex Oxide Interfaces for Nanoelectronics (COIN)

  • Majumdar, Sayani (Principal investigator)
  • Qin, QiHang (Project Member)
  • Tan, Hongwei (Project Member)
  • Pande, Ishan (Project Member)

Project Details


Complex metal oxides are one of the most versatile materials due to the coexistence of different electronic phases, leading to exotic and useful physical properties. Novel hetero- structures based on complex oxides hold great potential for applications in different commercial technologies like information and communication, energy generation and storage, fuel cells etc. Recent technical advances in the atomic-scale assembly of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces. One of such emergent phenomena in these structures is the tunneling electroresistance (TER) and magnetorsistance (TMR) effects in multiferroic tunnel junctions (MFTJ). The goal of the present project is to clarify the physics behind giant TER and TMR effects in all oxide MFTJs through study of interface electronic states between different complex oxides under external factors like electric fields. More info: (
Effective start/end date01/09/201531/08/2018

Collaborative partners

  • Aalto University (lead)
  • SA: Research funding (other) (Project partner)
  • Suomen Akatemia (Project partner)


Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.