N-polar wide band gap nitride materials and devices for future energy efficient ICT

Suihkonen, Sami (Principal investigator)

Department of Electronics and Nanoengineering

1 Article

1 results

2021
A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer
Pokharia, R. S., Sarkar, R., Singh, S., Deb, S., Suihkonen, S., Lemettinen, J., Dhar, S., Kabra, D. & Laha, A., Jun 2021, In: IEEE Transactions on Electron Devices. 68, 6, p. 2796-2803 8 p., 9423875.
Research output: Contribution to journal › Article › Scientific › peer-review
18 Citations (Scopus)