This project focuses on determining the defect related failure mechanisms of III-N devices through an intensive multidisciplinary research program combining theoretical and experimental materials science and III-N materials growth. The project will yield a deeper understanding of the effects of point defects and dislocations on the III-N device performance and lifetime. In the scope of the project new characterization, modelling and growth techniques will be developed in collaboration with leading research groups worldwide. The aim of the research is to identify the main materials related failure mechanisms and develop growth techniques that can be used to enhance the efficiency and lifetime of semiconductor devices for general lighting.
|Effective start/end date||01/09/2016 → 31/08/2019|
- Aalto University (lead)
- Suomen Akatemia (Project partner)
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