Engineering
Silicon
50%
Femtosecond Laser
43%
Recombination
36%
Carrier Lifetime
26%
Responsivity
25%
Performance
19%
Absorptance
17%
Minority Carrier
17%
Room Temperature
14%
Photovoltaics
12%
Photovoltaic Effect
10%
Upper Limit
10%
Semiconductor Manufacturing
10%
Repetition Rate
10%
Millisecond
10%
Phase Change Material
10%
Wavelength
9%
Fabrication
8%
Surface Layer
7%
Induced Defect
7%
Design
6%
Surface Morphology
6%
Surfaces
6%
Characteristics
6%
Applications
5%
Defects
5%
Back Side
5%
Quantum Efficiency
5%
Pressure Ratio
5%
Photocurrent
5%
Fast Response
5%
Processing
5%
Blackbody
5%
Substrates
5%
Physics
Silicon
100%
Laser
73%
Recombination
26%
Absorptance
24%
Performance
18%
Energy Gaps (Solid State)
17%
Dark Current
16%
Optoelectronic Device
11%
Ambient Air
10%
Parameter
10%
Boron
10%
Gases
10%
Optoelectronics
10%
Nitrogen
10%
Ion Implantation
10%
Concentration Dependence
10%
Independent Variables
7%
Surface Layers
7%
Etching
5%
Sides
5%
Technology
5%
Noise Spectrum
5%
Infrared Absorption
5%
Material Science
Laser
64%
Silicon
30%
Carrier Lifetime
26%
Gas
21%
Metal
20%
Surface Passivation
20%
Surface
14%
Doping (Additives)
14%
Etching
11%
Semiconductor Material
11%
Absorber
10%
Boron
10%
Photovoltaics
10%
Ion Implantation
10%
Lamp
10%
Surface Charge
10%
Ultrashort Pulse
10%
Nanocrystalline Material
8%
Temperature
6%
Devices
5%
Surface Morphology
5%
