Research output per year
Research output per year
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Dive into the research topics where Turkka Tuomi is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Geometric determination of direction of dislocations using synchrotron X-ray transmission topography
Tuomi, T. O., Lankinen, A. & Anttila, O., 1 Nov 2020, In: JOURNAL OF SYNCHROTRON RADIATION. 27, p. 1674-1680 7 p.Research output: Contribution to journal › Article › Scientific › peer-review
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MOCVD Al(Ga)N Insulator for Alternative Silicon-On-Insulator Structure
Ross, G., Luntinen, V., Broas, M., Suihkonen, S., Tuomi, T., Lankinen, A., Danilewsky, A., Tilli, M. & Paulasto-Kröckel, M., 15 Sep 2020, Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020. IEEE, 6 p. 9229836Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Open AccessFile1 Citation (Scopus)103 Downloads (Pure) -
MOVPE growth of GaN on 6-inch SOI-substrates: Effect of substrate parameters on layer quality and strain
Lemettinen, J., Kauppinen, C., Rudzinski, M., Haapalinna, A., Tuomi, T. O. & Suihkonen, S., 6 Mar 2017, In: Semiconductor Science and Technology. 32, 4, 10 p., 045003.Research output: Contribution to journal › Article › Scientific › peer-review
5 Citations (Scopus) -
Evolution of impurity incorporation during ammonothermal growth of GaN
Sintonen, S., Wahl, S., Richter, S., Meyer, S., Suihkonen, S., Schulz, T., Irmscher, K., Danilewsky, A. N., Tuomi, T., Stankiewicz, R. & Albrecht, M., 15 Dec 2016, In: Journal of Crystal Growth. 456, p. 51-57 7 p.Research output: Contribution to journal › Article › Scientific › peer-review
13 Citations (Scopus) -
Synchrotron x-ray topographic study of dislocations in GaAs detector crystals grown by vertical gradient freeze technique
Tuomi, T., Juvonen, M., Rantamäki, R., Hjelt, K. T., Bavdaz, M., Nenonen, S., McNally, P. J., Danilewsky, A. N., Prieur, E., Taskinen, M. & Tuominen, M., 1997, Materials Reseacrh Society Fall Meeting, Boston, USA, December 1-5, 1997. p. 233Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
8 Citations (Scopus)
Press / Media
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A SOI wafer is a suitable substrate for gallium nitride crystals
02/03/2017 → 06/03/2017
7 items of Media coverage
Press/Media: Media appearance