Sami Suihkonen

  • Phone+358503618657
  • Tietotie 3

20062020

Research output per year

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Personal profile

Education/Academic qualification

Doctor of Science (Technology), Electrical Engineering

Master of Science (Technology), Electrical Engineering

Keywords

  • Optoelectronics
  • GaN
  • LEDs

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Research Output

2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

Loginov, L. A., Shalygin, V. A., Moldavskaya, M. D., Vinnichenko, M. Y., Firsov, D. A., Maremyanin, K. V., Sakharov, A. V., Zavarin, E. E., Arteev, D. S., Lundin, W. V., Kauppinen, C. & Suihkonen, S., 25 Mar 2020, In : Journal of Physics: Conference Series. 1482, 1, 012022.

Research output: Contribution to journalConference articleScientificpeer-review

Open Access
File
  • 6 Downloads (Pure)

    Metalorganic chemical vapor deposition of aluminum nitride on vertical surfaces

    Österlund, E., Suihkonen, S., Ross, G., Torkkeli, A., Kuisma, H. & Paulasto-Kröckel, M., 1 Feb 2020, In : Journal of Crystal Growth. 531, 125345.

    Research output: Contribution to journalArticleScientificpeer-review

  • MOVPE growth of GaN on patterned 6-inch Si wafer

    Kim, I., Holmi, J., Raju, R., Haapalinna, A. & Suihkonen, S., 20 Apr 2020, In : Journal of Physics Communications. 4, 4, p. 45010

    Research output: Contribution to journalArticleScientificpeer-review

    Open Access
    File
  • 13 Downloads (Pure)

    Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

    Sarkar, R., Bhunia, S., Nag, D., Barik, B. C., Das Gupta, K., Saha, D., Ganguly, S., Laha, A., Lemettinen, J., Kauppinen, C., Kim, I., Suihkonen, S., Gribisch, P. & Osten, H. J., 5 Aug 2019, In : Applied Physics Letters. 115, 6, 063502.

    Research output: Contribution to journalArticleScientificpeer-review

    Open Access
    File
  • 1 Citation (Scopus)

    In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres

    Broas, M., Lemettinen, J., Sajavaara, T., Tilli, M., Vuorinen, V., Suihkonen, S. & Paulasto-Kröckel, M., 31 Jul 2019, In : Thin Solid Films. 682, p. 147-155 9 p.

    Research output: Contribution to journalArticleScientificpeer-review

  • Projects

    N-polar wide band gap nitride materials and devices for future energy efficient ICT

    Suihkonen, S. & Kim, I.

    01/09/201931/08/2021

    Project: Academy of Finland: Other research funding

    DeFaMe: Defect related failure mechanisms in III-N devices (DeFaMe)

    Suihkonen, S.

    01/09/201631/08/2021

    Project: Academy of Finland: Other research funding

    DeFaMe: Defect related failure mechanisms in III-N devices

    Kim, I., Suihkonen, S., Kauppinen, C. & Lemettinen, J.

    01/09/201624/09/2019

    Project: Academy of Finland: Other research funding

    Activities

    • 4 Visit abroad
    • 3 Hosting a visitor
    • 2 Conference presentation

    Hironori Okumura

    Sami Suihkonen (Host)
    1 Jan 2015

    Activity: Hosting a visitor typesHosting a visitor

    Mariusz Rudzinski

    Sami Suihkonen (Host)
    1 Jan 2013

    Activity: Hosting a visitor typesHosting a visitor

    University of California

    Sami Suihkonen (Visiting researcher)
    2013

    Activity: Visiting an external institution typesVisit abroad

    IOFFE-Institute

    Sami Suihkonen (Visiting researcher)
    2010

    Activity: Visiting an external institution typesVisit abroad

    Marius Rudzinski

    Sami Suihkonen (Host)
    1 Jan 2010

    Activity: Hosting a visitor typesHosting a visitor

    Press / Media

    A SOI Wafer Is A Suitable Substrate For Gallium Nitride Crystals

    Sami Suihkonen & Jori Lemettinen

    03/03/201708/03/2017

    2 items of Media coverage

    Press/Media: Media appearance

    A SOI wafer is a suitable substrate for gallium nitride crystals

    Sami Suihkonen, Jori Lemettinen, Christoffer Kauppinen & Turkka Tuomi

    02/03/201706/03/2017

    7 items of Media coverage

    Press/Media: Media appearance

    Silicon On Insulator Wafer Proves Useful for Microelectronics

    Sami Suihkonen & Jori Lemettinen

    06/03/2017

    1 item of Media coverage

    Press/Media: Media appearance