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INIS
photodiodes
74%
nitrogen
60%
liquids
55%
power
55%
cryostats
55%
wavelengths
40%
range
32%
silicon
27%
monochromators
27%
temperature range 0273-0400 k
27%
spectrophotometers
27%
design
26%
junctions
20%
layers
18%
irradiance
16%
photons
16%
values
12%
thickness
11%
ozone
11%
levels
11%
lasers
11%
substrates
10%
testing
9%
ice
9%
growth
9%
photocurrents
9%
variations
8%
configuration
8%
traps
8%
manufacturing
6%
modeling
6%
losses
6%
peaks
6%
fundamental constants
5%
filters
5%
corrections
5%
ultraviolet radiation
5%
comparative evaluations
5%
calibration
5%
Engineering
Photodiode
100%
Nitrogen
65%
Optical Power
55%
Primary Standard
47%
Room Temperature
38%
Responsivity
33%
Radiometer
32%
Reflectance
17%
Internal Quantum Efficiency
15%
Reflectance Measurement
13%
Photocurrent
9%
Predicted Value
9%
Polarized Light
9%
Charge Carrier
9%
Silicon Substrate
6%
Laser Wavelength
5%
Photodetector
5%
Physical Modeling
5%
Bias Voltage
5%
Operating Temperature
5%
Measurement Uncertainty
5%
Spectral Responsivity
5%
Confidence Level
5%
Reflected Light
5%
Reverse Bias
5%
Keyphrases
Liquid Nitrogen Temperature
27%
Brewer Spectrophotometer
27%
Out of Range
27%
Predictable Quantum Efficient Detector
27%
Cryostat
27%
Power with
27%
Optical Power
27%
Optical Radiation
11%
Cryostat Design
9%
Measurement Uncertainty
6%
Low Photon Flux
6%
Responsivity
6%
Laser Wavelength
6%
Relative Measurement
6%
Optical Power Measurement
6%
Photon Flux
6%
Primary Standard
6%
Confidence Level
6%
Dust Pollution
5%
New Primary
5%
Brewster Angle
5%
Fundamental Constants
5%
Silicon Photodetector
5%
Trap Structure
5%
