20102019

Research output per year

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Personal profile

Education/Academic qualification

Master of Science (Technology), Electrical Engineering

Bachelor of Science (Technology), Electrical Engineering

Fingerprint Dive into the research topics where Jori Lemettinen is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Research Output

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Sarkar, R., Bhunia, S., Nag, D., Barik, B. C., Das Gupta, K., Saha, D., Ganguly, S., Laha, A., Lemettinen, J., Kauppinen, C., Kim, I., Suihkonen, S., Gribisch, P. & Osten, H. J., 5 Aug 2019, In : Applied Physics Letters. 115, 6, 063502.

Research output: Contribution to journalArticleScientificpeer-review

  • In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres

    Broas, M., Lemettinen, J., Sajavaara, T., Tilli, M., Vuorinen, V., Suihkonen, S. & Paulasto-Kröckel, M., 31 Jul 2019, In : Thin Solid Films. 682, p. 147-155 9 p.

    Research output: Contribution to journalArticleScientificpeer-review

  • Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

    Lemettinen, J., Chowdhury, N., Okumura, H., Kim, I., Suihkonen, S. & Palacios, T., 1 Aug 2019, In : IEEE Electron Device Letters. 40, 8, p. 1245-1248 4 p., 8741077.

    Research output: Contribution to journalArticleScientificpeer-review

  • 5 Citations (Scopus)

    P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Si

    Chowdhury, N., Lemettinen, J., Xie, Q., Zhang, Y., Rajput, N. S., Xiang, P., Cheng, K., Suihkonen, S., Then, H. W. & Palacios, T., 1 Jul 2019, In : IEEE Electron Device Letters. 40, 7, p. 1036-1039 4 p., 8713471.

    Research output: Contribution to journalArticleScientificpeer-review

  • 12 Citations (Scopus)

    Site-specific growth of oriented ZnO nanocrystal arrays

    Bai, R., Pandya, D., Chaudhary, S., Dhaka, V., Khayrudinov, V., Lemettinen, J., Kauppinen, C. & Lipsanen, H., 1 Jan 2019, In : Beilstein Journal of Nanotechnology. 9, 1, p. 274-280 7 p.

    Research output: Contribution to journalArticleScientificpeer-review

    Open Access
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  • 1 Citation (Scopus)
    116 Downloads (Pure)

    Projects

    DeFaMe: Defect related failure mechanisms in III-N devices

    Kim, I., Suihkonen, S., Kauppinen, C. & Lemettinen, J.

    01/09/201624/09/2019

    Project: Academy of Finland: Other research funding

    NP-NANO: Emerging nanophotonic devices using advanced materials

    Lipsanen, H., Mäntynen, H., Lemettinen, J., Peygambarian, N., Matikainen, A., Holmi, J., Khayrudinov, V., Mackenzie, D., Autere, A. & Säynätjoki, A.

    01/10/201301/05/2019

    Project: Business Finland: Other research funding

    Electromechanical quantum coherent systems

    Sillanpää, M., Ockeloen-Korppi, C., Lemettinen, J., Paraoanu, G., Kervinen, M. & Damskägg, E.

    01/01/201031/10/2015

    Project: EU: ERC grants

    Activities

    • 2 Visit abroad

    Massachusetts Institute of Technology

    Jori Lemettinen (Visiting researcher)
    1 Jul 201830 Jun 2019

    Activity: Visiting an external institution typesVisit abroad

    Karlsruhe Institute of Technology

    Jori Lemettinen (Visiting researcher)
    13 Apr 201617 Apr 2016

    Activity: Visiting an external institution typesVisit abroad

    Press / Media

    A SOI Wafer Is A Suitable Substrate For Gallium Nitride Crystals

    Sami Suihkonen & Jori Lemettinen

    03/03/201708/03/2017

    2 items of Media coverage

    Press/Media: Media appearance

    Silicon On Insulator Wafer Proves Useful for Microelectronics

    Sami Suihkonen & Jori Lemettinen

    06/03/2017

    1 item of Media coverage

    Press/Media: Media appearance

    A SOI wafer is a suitable substrate for gallium nitride crystals

    Sami Suihkonen, Jori Lemettinen, Christoffer Kauppinen & Turkka Tuomi

    02/03/201706/03/2017

    7 items of Media coverage

    Press/Media: Media appearance

    SOI Wafer is a Suitable Substrate for GaN Crystals

    Sami Suihkonen & Jori Lemettinen

    03/03/2017

    1 item of Media coverage

    Press/Media: Media appearance

    GaN on SOI wafer promises higher-performance power, RF devices

    Jori Lemettinen

    03/03/2017

    2 items of Media coverage

    Press/Media: Media appearance