20152020

Research output per year

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Research Output

  • 7 Article
  • 1 Conference contribution
  • 1 Conference article
  • 1 Review Article
2020

MOVPE growth of GaN on patterned 6-inch Si wafer

Kim, I., Holmi, J., Raju, R., Haapalinna, A. & Suihkonen, S., 20 Apr 2020, In : Journal of Physics Communications. 4, 4, p. 45010

Research output: Contribution to journalArticleScientificpeer-review

Open Access
File
8 Downloads (Pure)
2019

Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Seppänen, H., Kim, I., Etula, J., Ubyivovk, E., Buravlev, A. & Lipsanen, H., 28 Jan 2019, In : Materials. 12, 3, 8 p., 406.

Research output: Contribution to journalArticleScientificpeer-review

Open Access
File
1 Citation (Scopus)
161 Downloads (Pure)

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Sarkar, R., Bhunia, S., Nag, D., Barik, B. C., Das Gupta, K., Saha, D., Ganguly, S., Laha, A., Lemettinen, J., Kauppinen, C., Kim, I., Suihkonen, S., Gribisch, P. & Osten, H. J., 5 Aug 2019, In : Applied Physics Letters. 115, 6, 063502.

Research output: Contribution to journalArticleScientificpeer-review

Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

Lemettinen, J., Chowdhury, N., Okumura, H., Kim, I., Suihkonen, S. & Palacios, T., 1 Aug 2019, In : IEEE Electron Device Letters. 40, 8, p. 1245-1248 4 p., 8741077.

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Selective area epitaxy of n+-GaN layers on SiO2 patterned GaN/c-Al2O3 templates by PA MBE

Shubina, K. Y., Mizerov, A. M., Timoshnev, S. N., Mokhov, D. V., Nikitina, E. V., Kim, I. & Bouravleuv, A. D., 20 Dec 2019, In : Journal of Physics: Conference Series. 1410, 1, 012014.

Research output: Contribution to journalConference articleScientificpeer-review

Open Access
File
19 Downloads (Pure)
2018

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Lemettinen, J., Okumura, H., Kim, I., Rudzinski, M., Grzonka, J., Palacios, T. & Suihkonen, S., 1 Apr 2018, In : Journal of Crystal Growth. 487, p. 50-56 7 p.

Research output: Contribution to journalArticleScientificpeer-review

Open Access
File
14 Citations (Scopus)
10 Downloads (Pure)

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Lemettinen, J., Okumura, H., Kim, I., Kauppinen, C., Palacios, T. & Suihkonen, S., 1 Apr 2018, In : Journal of Crystal Growth. 487, p. 12-16 5 p.

Research output: Contribution to journalArticleScientificpeer-review

Open Access
File
6 Citations (Scopus)
6 Downloads (Pure)
2017

Diffusion-Driven Charge Transport in Light Emitting Devices

Kim, I., Kivisaari, P., Oksanen, J. & Suihkonen, S., 12 Dec 2017, In : Materials. 10, 12, p. 1-17 17 p., 1421.

Research output: Contribution to journalReview ArticleScientificpeer-review

Open Access
File
2 Citations (Scopus)
98 Downloads (Pure)
7 Citations (Scopus)

Elimination of resistive losses in large-area LEDs by new diffusion-driven devices

Kivisaari, P., Kim, I., Suihkonen, S. & Oksanen, J., 2017, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI. Kim, JK., Krames, MR., Tu, LW. & Strassburg, M. (eds.). SPIE - The International Society for Optical Engineering, 101240Z. (Proceedings of SPIE : the International Society for Optical Engineering; vol. 10124).

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Open Access
File
3 Citations (Scopus)
4 Downloads (Pure)