20152020

Research output per year

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Personal profile

Education/Academic qualification

Master of Science (Technology)

Master of Science (Technology), Saint Petersburg Electrotechnical University

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Research Output

  • 7 Article
  • 1 Conference contribution
  • 1 Conference article
  • 1 Review Article

MOVPE growth of GaN on patterned 6-inch Si wafer

Kim, I., Holmi, J., Raju, R., Haapalinna, A. & Suihkonen, S., 20 Apr 2020, In : Journal of Physics Communications. 4, 4, p. 45010

Research output: Contribution to journalArticleScientificpeer-review

Open Access
File
  • 13 Downloads (Pure)

    Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

    Seppänen, H., Kim, I., Etula, J., Ubyivovk, E., Buravlev, A. & Lipsanen, H., 28 Jan 2019, In : Materials. 12, 3, 8 p., 406.

    Research output: Contribution to journalArticleScientificpeer-review

    Open Access
    File
  • 2 Citations (Scopus)
    167 Downloads (Pure)

    Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

    Sarkar, R., Bhunia, S., Nag, D., Barik, B. C., Das Gupta, K., Saha, D., Ganguly, S., Laha, A., Lemettinen, J., Kauppinen, C., Kim, I., Suihkonen, S., Gribisch, P. & Osten, H. J., 5 Aug 2019, In : Applied Physics Letters. 115, 6, 063502.

    Research output: Contribution to journalArticleScientificpeer-review

    Open Access
    File
  • 1 Citation (Scopus)
    1 Downloads (Pure)

    Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

    Lemettinen, J., Chowdhury, N., Okumura, H., Kim, I., Suihkonen, S. & Palacios, T., 1 Aug 2019, In : IEEE Electron Device Letters. 40, 8, p. 1245-1248 4 p., 8741077.

    Research output: Contribution to journalArticleScientificpeer-review

  • 6 Citations (Scopus)

    Selective area epitaxy of n+-GaN layers on SiO2 patterned GaN/c-Al2O3 templates by PA MBE

    Shubina, K. Y., Mizerov, A. M., Timoshnev, S. N., Mokhov, D. V., Nikitina, E. V., Kim, I. & Bouravleuv, A. D., 20 Dec 2019, In : Journal of Physics: Conference Series. 1410, 1, 012014.

    Research output: Contribution to journalConference articleScientificpeer-review

    Open Access
    File
  • 21 Downloads (Pure)

    Projects

    N-polar wide band gap nitride materials and devices for future energy efficient ICT

    Suihkonen, S. & Kim, I.

    01/09/201931/08/2021

    Project: Academy of Finland: Other research funding

    DeFaMe: Defect related failure mechanisms in III-N devices

    Kim, I., Suihkonen, S., Kauppinen, C. & Lemettinen, J.

    01/09/201624/09/2019

    Project: Academy of Finland: Other research funding

    Activities

    • 1 Studies abroad

    European School On Nanosciences & Nanotechnologies (ESONN)

    Iurii Kim (Student)
    27 Aug 201716 Sep 2017

    Activity: Visiting an external institution typesStudies abroad

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