Heli Seppänen

Doctoral Candidate

Research outputs

  1. 2019
  2. Published

    Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

    Seppänen, H., Kim, I., Etula, J., Ubyivovk, E., Buravlev, A. & Lipsanen, H., 28 Jan 2019, In : Materials. 12, 3, 8 p., 406.

    Research output: Contribution to journalArticleScientificpeer-review

  3. 2018
  4. Published

    Silicon surface passivation with atomic layer deposited aluminum nitride

    Repo, P., Bao, Y., Seppanen, H., Sippola, P. & Savin, H., 25 May 2018, 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers, p. 1-4 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

ID: 21466835