Harri Lipsanen

Professor

Research outputs

  1. 1996
  2. Published

    Optical characterisation of self organised InGaAs/InP heterodots

    Guasch, C., Ahopelto, J., Lipsanen, H., Sopanen, M., Tang, Y. & Sotomayor Torres, C., 1996, Proceedings of 23rd International Symposium on Compound Semiconductors (IOP Publishing Limited, UK) St Petersburg, Russia, 23-27 September 1996. St Petersburg, Russia

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  3. Published

    Optical characterization of self-organized InGaAs/GaAs heterodots

    Guasch, C., Ahopelto, J., Lipsanen, H., Sopanen, M., Tang, Y. & Sotomayor Torres, C., 1996, 1996 ECAMI Workshop on Nanostructures and Mesoscopic Systems, Ottawa, Institute of Microstructural Sciences, National Research Council of Canada, 12-14 June 1996. Ottawa, Canada

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  4. Published

    Red luminescence from strain-induced GaInP quantum dots

    Sopanen, M., Taskinen, M., Lipsanen, H. & Ahopelto, J., 1996, In : Applied Physics Letters. 69, 22, p. 3393-3395 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  5. Published

    Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots

    Grosse, S., Sandmann, J., von Plessen, G., Feldmann, J., Lipsanen, H., Sopanen, M., Tulkki, J. & Ahopelto, J., 1996, Berlin, Germany, p. 1401-1404, (The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996).

    Research output: Working paperProfessional

  6. Published

    Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits

    Karilahti, M., Tuomi, T., Taskinen, M., Tulkki, J., Lipsanen, H. & McNally, P., 1996, Palermo, Italy, p. 132, (3rd European Symposium on X-ray topography and high resolution diffraction (X-TOP'96), Palermo, Italy, 22-24 April 1996).

    Research output: Working paperProfessional

  7. Published

    Untersuchung der Relaxationsdynamik optisch generierter Ladungsträger in verspannungsinduzierten InGaAs Quantenpunkten

    Grosse, S., Sandmann, J., Feldmann, J., Lipsanen, H., Sopanen, M., Tulkki, J. & Ahopelto, J., 1996, Die 60. Physikertagung der Deutsche Physikalische Gesellschaft, Jena, 18-23 März 1996.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  8. Published

    Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors

    Sopanen, M., Taskinen, M., Lipsanen, H. & Ahopelto, J., 1996, Berlin, Germany, p. 1409-1412, (The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin, 1996).

    Research output: Working paperProfessional

  9. 1995
  10. Published

    Growth of high-quality GaSb by metalorganic vapor phase epitaxy.

    Sopanen, M., Koljonen, T., Lipsanen, H. & Tuomi, T., Nov 1995, In : Journal of Electronic Materials. 24, 11, p. 1691-1696 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  11. Published

    Recombination processes in strain-induced InGaAs quantum dots

    Sandmann, J., Grosse, S., Feldmann, J., Lipsanen, H., Sopanen, M., Tulkki, J. & Ahopelto, J., Nov 1995, In : NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D: CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS. 17, 11-12, p. 1699-1703 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  12. Published

    Modeling, fabrication and characterization of 1.43 my m InGaAsP/InP separate confinement heterostructure multiple quantum-well lasers.

    Taskinen, M., Heinämäki, A., Lipsanen, H., Tulkki, J. & Tuomi, T., 1 Sep 1995, In : Optical engineering. 34, 9, p. 2527-2531 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  13. Published

    Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots

    Lipsanen, H., Sopanen, M. & Ahopelto, J., 15 May 1995, In : Physical Review B. 51, 19, p. 13868-13871 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  14. Published

    Optical Spectroscopy of Bragg Confined Transitions in a Superlattice with Multiquantum Barriers

    Lipsanen, H., Taskinen, K. & Airaksinen, V. M., Feb 1995, In : Solid State Communications. 93, 6, p. 525-528 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  15. Published
  16. Published

    Fabrication and properties of strained-layer quantum-well lasers for operation at the wavelength of 1.02 my m.

    Lipsanen, H., Salo, T. & Tuomi, T., 1995, Jyväskylä, p. 7.

    Research output: Working paperProfessional

  17. Published

    Fabrication, characterization and modelling of stain-induced quantum dots.

    Lipsanen, H., Sopanen, M., Ahopelto, J., Heinämäki, A., Tulkki, J. & Tuomi, T., 1995, Jyväskylä, p. 7.

    Research output: Working paperProfessional

  18. Published

    InGaAs quantum dots induced by self-organized InP stressors.

    Lipsanen, H., Ahopelto, J. & Sopanen, M., 1995, Sapporo, Japan, p. s.

    Research output: Working paperProfessional

  19. Published

    Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.

    Taskinen, M., Heinämäki, A., Lipsanen, H., Tulkki, J. & Tuomi, T., 1995, Jyväskylä, p. 7.

    Research output: Working paperProfessional

  20. Published

    Optical properties of self-organized InGaAs/InP dots

    Ahopelto, J., Lipsanen, H. & Sopanen, M., 1995, Seventh International Conference on Indium Phosphide and Related Materials, 1995. IEEE, p. 311-314 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  21. Published

    Optical properties of self-organized InGaAs/InP dots.

    Lipsanen, H., Ahopelto, J. & Sopanen, M., 1995, Sapporo, Japan, p. s.

    Research output: Working paperProfessional

  22. Published

    Recombination processes in strain-induced InGaAs quantum dots.

    Lipsanen, H., Sandman, J., Grosse, S., Feldmann, J., Gobel, E. O., Sopanen, M. & Ahopelto, J., 1995, Cortona, Italy, p. s.

    Research output: Working paperProfessional

  23. Published

    Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.

    Sopanen, M., Lipsanen, H. & Ahopelto, J., 1995, Forth Myers, Florida, p. s.

    Research output: Working paperProfessional

  24. Published

    Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy.

    Sopanen, M., Lipsanen, H. & Ahopelto, J., 1995, In : Applied Physics Letters. 67, 25, p. 3768-3770 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  25. Published

    Strain-induced quantum dots by self-organized stressors

    Sopanen, M., Lipsanen, H. & Ahopelto, J., 1995, In : Applied Physics Letters. 66, 18, p. 2364-2366 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  26. Published

    Synchrotron X-ray topographic studies of strain in silicon wafers with integrated circuits.

    Tuomi, T., Karilahti, M., Äyräs, P., Lipsanen, H. & McNally, P., 1995, Germany, p. 871-872.

    Research output: Working paperProfessional

  27. 1994
  28. Published

    Growth of GaInAsSb using tertiarybutylarsine as arsenic source

    Sopanen, M., Koljonen, T., Lipsanen, H. & Tuomi, T., 2 Dec 1994, In : Journal of Crystal Growth. 145, 1-4, p. 492-497 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  29. Published

    Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

    Lipsanen, H., Ahopelto, J., Koljonen, T. & Sopanen, M., 2 Dec 1994, In : Journal of Crystal Growth. 145, 1-4, p. 988-989 2 p.

    Research output: Contribution to journalArticleScientificpeer-review

  30. Published

    Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses

    Lipsanen, H. K. & Airaksinen, V. M., May 1994, In : Journal of Electronic Materials. 23, 5, p. 465-470 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  31. Published

    Fabrication of Nanostructures using MBE and MOVPE

    Ahopelto, J., Lipsanen, H., Sopanen, M., Koljonen, T., Tuomi, T., Airaksinen, V. M., Sinkkonen, J. & Siren, E., 1994, In : Physica Scripta. 1994, T54, p. 241-243 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  32. Published

    Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources

    Koljonen, T., Sopanen, M., Lipsanen, H. & Tuomi, T., 1994, Espoo, p. 15-16, (Optoelectronics Laboratory, Annual Report 1993; no. TKK-F-C160).

    Research output: Working paperProfessional

  33. Published

    Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE

    Sopanen, M., Koljonen, T., Lipsanen, H. & Hjelt, K., 1994, Espoo, p. 19-21, (Optoelectronics Laboratory; no. TKK-F-C160).

    Research output: Working paperProfessional

  34. Published

    Interference effects in photoreflectance of epitaxial layers grown on semi-insulating substrates

    Lipsanen, H. K. & Airaksinen, V. M., 1994, Espoo, p. 27-29, (Optoelectronics Laboratory, Annual Report 1993; no. TKK-F-C160).

    Research output: Working paperProfessional

  35. Published

    Metallo organic vapour phase epitaxy of III-V semiconductors

    Sopanen, M., Koljonen, T., Lipsanen, H., Taskinen, M. & Tuomi, T., 1994, Helsinki, p. paper 12:16, (Report Series in Physics; no. HU-P-260 (1994)).

    Research output: Working paperProfessional

  36. Published

    MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources

    Sopanen, M., Lipsanen, H., Koljonen, T., Ahopelto, J. & Taskinen, M., 1994, Espoo, p. 22-24, (Optoelectronics Laboratory, Annual Report 1993; no. TKK-F-C160).

    Research output: Working paperProfessional

  37. Published

    MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

    Sopanen, M., Koljonen, T. & Lipsanen, H., 1994, Espoo, p. 25-26, (Optoelectronics Laboratory, Annual Report 1993; no. TKK-F-C160).

    Research output: Working paperProfessional

  38. Published

    Photoluminescene of buried InGaAs grown on nanoscale InP islands by MOVPE

    Lipsanen, H., Ahopelto, J., Koljonen, T. & Sopanen, M., 1994, In : Journal of Crystal Growth. 145, p. 988-989

    Research output: Contribution to journalArticleScientificpeer-review

  39. Published
  40. Published

    Selective growth of InGaAs on nanoscale InP islands

    Ahopelto, J., Lipsanen, H., Sopanen, M., Koljonen, T. & Niemi, H., 1994, In : Applied Physics Letters. 65, 13, p. 1662-1664 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  41. Published

    Self-organising growth of nanoscale heterostructures: Selective growth of InGaAs on InP dots

    Ahopelto, J., Lipsanen, H., Sopanen, M. & Niemi, HE-M., 1994, Phantoms Meeting Phasdom, Dublin, Ireland, October 3-6, 1994. p. 2

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  42. Published

    Self-organizing growth of InGaAs on nanoscale InP islands

    Ahopelto, J., Lipsanen, H., Sopanen, M. & Koljonen, T., 1994, Sixth International Conference on Indium Phosphide and Related Materials, Santa Barbara, USA, March 28-31, 1994. USA, p. Paper PDB 4

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  43. Published

    X-ray diffraction study of GaSb on GaAs grown by MOVPE

    Lipsanen, H., Koljonen, T., Sopanen, M. & Tuomi, T., 1994, Espoo, p. 17-18, (Optoelectronics Laboratory, Annual Report 1993; no. TKK-F-C160).

    Research output: Working paperProfessional

  44. 1993
  45. Published

    Praseodymium dioxide doping of In1-xGaxAsyP1-y epilayer grown with liquid phase epitaxy

    Hjelt, K. T., Sopanen, M. A., Lipsanen, H. K., Tuomi, T. O. & Hasenohrl, S., 1 Jan 1993, RARE EARTH DOPED SEMICONDUCTORS. Pomrenke, G. S., Klein, P. B. & Langer, D. W. (eds.). Materials Research Society MRS, p. 27-32 6 p. (MRS Proceedings ; vol. 301).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  46. Published

    Accurate determination of the layer thicnesses of a GaAs/AlAs superlattice

    Lipsanen, H. K., Tuominen, M. & Airaksinen, V. M., 1993, Espoo, p. 20-22, (Optoelectronics Laboratory, Helsinki University of Technology; no. TKK-F-C148).

    Research output: Working paperProfessional

  47. Published

    Interference Effects in Photoreflectance of Epitaxial Layers Grown on Semi-insulating Substrates

    Lipsanen, H. K. & Airaksinen, V. M., 1993, In : Applied Physics Letters. 63, 21, p. 2863-2865 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  48. Published

    Liquid phase epitaxial growth of GaSb layers from Ga- and Sn-rich melts

    Koljonen, T., Sopanen, M., Hjelt, K., Lipsanen, H. & Tuomi, T., 1993, The XXVII Annual Conference of the Finnish Physical Society, March 18-20, 1993. The Finnish Physical Society, p. paper 25:14

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  49. Published

    Metallo-organic vapor phase system

    Lipsanen, H., Hjelt, K., Koljonen, T., Sopanen, M. & Tuomi, T., 1993, Espoo, p. 12-13, (Optoelectronics Laboratory, Helsinki University of Technology; no. TKK-F-C148).

    Research output: Working paperProfessional

  50. Published

    Optical and electronic properties of praseodymium dioxide doped In_(1-x)Ga_(x)As_(y)P_(1-y) layers grown with liquid phase epitaxy

    Hjelt, K., Sopanen, M., Lipsanen, H., Tuomi, T. & Hasenöhrl, S., 1993, The XXVII Annual Conference of the Finnish Physical Society, Turku, March 18-20, 1993. The Finnish Physical Society, p. paper 25:15

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  51. Published

    Photoluminescence of GaSb wafers and LPE grown layers

    Sopanen, M., Hjelt, K., Koljonen, T., Lipsanen, H., Koponen, M. & Tuomi, T., 1993, The XXVII Annual Conference of the Finnish Physical Society, Turku, March 18-20,1993. The Finnish Physical Society, p. paper 25:13

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  52. Published

    Photoreflectance of Bragg confined transitions in a superlattice with multiquantum barries

    Lipsanen, H. K., Airaksinen, V. M. & Taskinen, K., 1993, Espoo, p. 17-19, (Optoelectronics Laboratory, Helsinki University of Technology; no. TKK-F-C148).

    Research output: Working paperProfessional

  53. Published

    Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy

    Hjelt, K., Sopanen, M., Lipsanen, H. & Tuomi, T., 1993, USA, p. 27-32, (Materials Research Society Symposium Proceedings; no. 30).

    Research output: Working paperProfessional

  54. Published

    Study of direct to indirect transition in GaAs/AlAs superlattices

    Lipsanen, H. K., Airaksinen, V. M. & Tuomi, T., 1993, XXVII Annual Conference of the Finnish Physical Society, Turku, March 18-20, 1993. Finnish Physical Society, p. paper 25:12

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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