Harri Lipsanen

Professor

Research outputs

  1. 2006
  2. Published

    Nitrogen content of GaAsN quantum wells by in-situ monitoring during MOVPE growth

    Reentilä, O., Mattila, M., Sopanen, M. & Lipsanen, H., 1 May 2006, In : Journal of Crystal Growth. 290, 2, p. 345-349 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  3. Published

    Carrier dynamics in strain-induced InGaAsP/InP quantum dots

    Koskenvaara, H., Riikonen, J., Sormunen, J., Sopanen, M. & Lipsanen, H., May 2006, In : PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES. 32, 1-2, p. 179-182 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  4. Published

    Metal contacts on InN: Proposal for Schottky contact

    Rangel-Kuoppa, V. T., Suihkonen, S., Sopanen, M. & Lipsanen, H., 10 Jan 2006, In : Japanese Journal of Applied Physics. 45, 1A, p. 36-39 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  5. Published

    Catalyst-free growth of In(As)P nanowires on silicon

    Mattila, M., Hakkarainen, T., Lipsanen, H., Jiang, H. & Kauppinen, E., 2006, In : Applied Physics Letters. 89, 6, p. 1-3 3 p., 063119.

    Research output: Contribution to journalArticleScientificpeer-review

  6. Published

    Characterization of photonic crystal waveguides using Fabry-Pérot resonances

    Säynätjoki, A., Mulot, M., Arpiainen, S., Ahopelto, J. & Lipsanen, H., 2006, In : Journal of Optics A: Pure and Applied Optics. 8, 7, p. S502-S506 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  7. Published

    Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wells

    Aierken, A., Riikonen, J., Sormunen, J., Sopanen, M. & Lipsanen, H., 2006, In : Applied Physics Letters. 88, 22, p. 1-3 3 p., 221112.

    Research output: Contribution to journalArticleScientificpeer-review

  8. Published

    Comparison of Ge and GaAs substrates for metalorganic vapor phase epitaxy of GaIn(N)As quantum wells

    Knuuttila, L., Reentila, O., Mattila, M. & Lipsanen, H., 2006, In : Japanese Journal of Applied Physics. 44, 46-49, p. L1475-L1477 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  9. Published

    Crystal-structure-dependent photoluminescence from InP nanowires

    Mattila, M., Hakkarainen, T., Mulot, M. & Lipsanen, H., 2006, In : Nanotechnology. 17, 6, p. 1580-1583 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  10. Published

    Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots

    Riikonen, J., Sormunen, J., Koskenvaara, H., Mattila, M., Aierken, A., Hakkarainen, T., Sopanen, M. & Lipsanen, H., 2006, In : Nanotechnology. 17, 9, p. 2181-2186 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  11. Published

    Hydrogen treatment of InGaN/GaN MQW structures

    Suihkonen, S., Svensk, O., Lang, T., Törmä, P., Lipsanen, H., Odnoblyudov, M. A. & Bougrov, V. E., 2006, (ISGN Symposium, Linköping, Ruotsi, 2006).

    Research output: Working paperProfessional

  12. Published

    Inductively coupled plasma etching of III-nitride based laser structure using CI2/BCI3/Ar gasses

    Törmä, P., Svensk, O., Suihkonen, S., Lipsanen, H., Odnoblyudov, V. E. & Bougrov, V. E., 2006, (WBSQ Symposium, Ascona, Sveitsi, 2006).

    Research output: Working paperProfessional

  13. Published

    In-situ composition determination of MOVPE grown InGaAsN quantum wells

    Reentilä, O., Mattila, M., Sopanen, M. & Lipsanen, H., 2006, (3rd Workshop of Metastable Compound Semiconductor Systems and Heterostructures, Marburg, Saksa, 18-20.12.2006).

    Research output: Working paperProfessional

  14. Published

    In-situ determination of nitrogen content in InGaAsN quantum wells

    Reentilä, O., Mattila, M., Knuuttila, L., Hakkarainen, T., Sopanen, M. & Lipsanen, H., 2006, In : Journal of Applied Physics. 100, 1, p. 1-4 4 p., 013509.

    Research output: Contribution to journalArticleScientificpeer-review

  15. Published

    In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases

    Reentilä, O., Mattila, M., Knuuttila, L., Hakkarainen, T., Sopanen, M. & Lipsanen, H., 2006, (13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japani, 22-26.5.2006).

    Research output: Working paperProfessional

  16. Published

    In situ reflectance monitoring of thick GaAsN layers

    Reentilä, O., Lankinen, A., Säynätjoki, A., Mattila, M., Tuomi, T., Lipsanen, H., "O'Reilly", L. & McNally, P. J., 2006, The 6th International Conference on Materials for Microelectronics & Nanoengineering MFMN, 27-29.10.2006, Cranfield, UK. p. 29-32

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  17. Published

    Magnesium doping of group-III nitrides for LED- and laser structures

    Svensk, O., Suihkonen, S., Lipsanen, H., Odnoblyudov, M. A. & Bougrov, V. E., 2006, (IC MOVPE XIII, Miyazaki, Japani, 2006).

    Research output: Working paperProfessional

  18. Published

    Reduction of threading dislocation density in AlGaN epilayers by a multistep technique

    Lang, T., Odnoblyudov, M., Bougrov, V., Suihkonen, S., Svensk, O., Törmä, P. & Lipsanen, H., 2006, (IC MOVPE XIII, Miyazaki, Japani, 2006).

    Research output: Working paperProfessional

  19. Published

    Simultaneous determinationof indium and nitrogen contents of InGaAsN quantum wells by optical in-situ monitoring

    Reentilä, O., Mattila, M., Sopanen, M. & Lipsanen, H., 2006, In : Applied Physics Letters. 89, 23, p. 1-3 3 p., 231919.

    Research output: Contribution to journalArticleScientificpeer-review

  20. Published

    The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance

    Suihkonen, S., Svensk, O., Lang, T., Lipsanen, H., Odnoblyudov, M. A. & Bougrov, V. E., 2006, (IC MOVPE XIII, Miyazaki, Japani, 2006).

    Research output: Working paperProfessional

  21. Published

    Topography imaging of defects in GaAs on Ge

    Lankinen, A., Tuomi, T., Knuuttila, L., Kostamo, P., Säynätjoki, A., Lipsanen, H., McNally, P. J. & lu, X., 2006, HASYLAB Annual report 2005, Part I. Hampuri, Saksa: HASYLAB, p. 561-562

    Research output: Chapter in Book/Report/Conference proceedingChapterScientificpeer-review

  22. 2005
  23. Published

    Low temperature growth GaAs on Ge

    Knuuttila, L., Lankinen, A., Likonen, J., Lipsanen, H., Lu, X., McNally, P., Riikonen, J. & Tuomi, T., 9 Nov 2005, In : Japanese Journal of Applied Physics. 44, 11, p. 7777-7784 8 p.

    Research output: Contribution to journalArticleScientificpeer-review

  24. Published

    Synchrotron x-ray topographic study of dislocations and stacking faults in InAs

    Lankinen, A., Tuomi, T., Riikonen, J., Knuuttila, L., Lipsanen, H., Sopanen, M., Danilewsky, A., McNally, J., "O'Reilly", L., Zhilyaev, Y. & 6 othersFedorov, L., Sipilä, H., Vaijärvi, S., Simon, R., Lumb, D. & Owens, A., 1 Oct 2005, In : Journal of Crystal Growth. 283, 3-4, p. 320-327 8 p.

    Research output: Contribution to journalArticleScientificpeer-review

  25. Published

    Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy

    Riikonen, J., Tuomi, T., Lankinen, A., Sormunen, J., Säynätjoki, A., Knuuttila, L., Lipsanen, H., McNally, P. J., Danilewsky, A., Sipilä, H. & 3 othersVaijärvi, S., Lumb, D. & Owens, A., Jul 2005, In : Journal of Materials Science: Materials in Electronics. 16, 7, p. 449-453 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  26. Published

    Characterization of photonic crystal waveguides fabricated in silicon-on-insulator

    Säynätjoki, A., Mulot, M., Arpiainen, S., Ahopelto, J. & Lipsanen, H., 2005, (Proceedings of the Finnish Optic Days, Jyväskylä Finland, 12-13 May).

    Research output: Working paperProfessional

  27. Published

    Characterization of photonic crystal waveguides using Fabry-Perot resonances

    Säynätjoki, A., Mulot, M., Arpiainen, S., Lipsanen, H. & Ahopelto, J., 2005, (Optical Microsystems 2005, Capri, Italy, September 15-18).

    Research output: Working paperProfessional

  28. Published

    Evolution of Self-Assembled InAs/InP Islands into Quantum Rings

    Sormunen, J., Riikonen, J., Hakkarainen, T., Sopanen, M. & Lipsanen, H., 2005, In : Japanese Journal of Applied Physics. 44, 42-45, p. L1323-L1325 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  29. Published

    Ge/GaAs heterostructures matrix detector

    Kostamo, P., Säynätjoki, A., Knuuttila, L., Lipsanen, H., Andersson, H. & Banzuzi, K., 2005, IWORID, Grenoble France, 4-7 July.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  30. Published

    High-index-contrast Optical Waveguides on Silicon

    Säynätjoki, A., Arpiainen, S., Ahopelto, J. & Lipsanen, H., 2005, Physics of Semiconductors, Parts A and B. Menendez, J. & VandeWalle, CG. (eds.). AIP, p. 1537-1538 2 p. (AIP Conference Proceedings ; vol. 772).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  31. Published

    Highly Tunable Emission from Strain-Induced InGasp/InP Quantum Dots

    Riikonen, J., Sormunen, J., Koskenvaara, H., Mattila, M., Sopanen, M. & Lipsanen, H., 2005, In : Japanese Journal of Applied Physics. 44, 28-32, p. L976-L978 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  32. Published

    InAs pixel matrix detector structures fabricated by diffusion of Zn utilising metal-organic vapour phase epitaxy

    Säynätjoki, A., Kostamo, P., Sormunen, J., Riikonen, J., Lankinen, A., Lipsanen, H., Andersson, H., Banzuzi, K., Nenonen, S., Sipilä, H. & 1 othersVaijärvi, S., 2005, (The International Workshop on Radiation Imaging Detectors, Grenoble, France, 4-7 July).

    Research output: Working paperProfessional

  33. Published

    InGaAs/InP quantum dots induced by self-organized InAs stressors-islands

    Riikonen, J., Sormunen, J., Mattila, M., Sopanen, M. & Lipsanen, H., 2005, In : Japanese Journal of Applied Physics. 44, 16-19, p. L518-L520 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  34. Published

    Low air-fill-factor photonic crystals with ring-shaped holes in a triangular lattice

    Mulot, M., Säynätjoki, A., Arpiainen, S., Lipsanen, H. & Ahopelto, J., 2005, (COST action P11 Workshop, Twente, The Netherlands, October 2-4).

    Research output: Working paperProfessional

  35. Published

    Low Tempereture Growth GaAs on Ge

    Knuuttila, L., Lankinen, A., Likonen, J., Lipsanen, H., Lu, X., McNally, P., Riikonen, J. & Tuomi, T., 2005, In : Japanese Journal of Applied Physics. 44, 11, p. 7777-7788

    Research output: Contribution to journalArticleScientificpeer-review

  36. Published

    Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy

    Knuuttila, L., Lankinen, A. & Lipsanen, H., 2005, (11th European Workshop on Metalorganic Vapour phase Epitaxy, Lausanne, Switzerland, 5-8 June 2005).

    Research output: Working paperProfessional

  37. Published

    Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAS(P)/InP

    Sormunen, J., Riikonen, J., Mattila, M., Sopanen, M. & Lipsanen, H., 2005, In : Nanotechnology. 16, 9, p. 1630-1635 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  38. Published

    Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

    Mattila, M., Sopanen, M. & Lipsanen, H., 2005, p. 118-118, (AIP Conference Proceedings 772).

    Research output: Working paperProfessional

  39. Published

    Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

    Mattila, M., Sopanen, M. & Lipsanen, H., 2005, Physics of Semiconductors, Parts A and B. Menendez, J. & VanDeWalle, CG. (eds.). AIP, p. 117-118 2 p. (AIP Conference Proceedings ; vol. 772).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  40. Published

    Photonic crystal slabs with ring-shaped holes in a triangular lattice

    Mulot, M., Säynätjoki, A., Arpiainen, S., Lipsanen, H. & Ahopelto, J., 2005, Proceedings of 2005 7th International Conference on Transparent Optical Networks, ICTON 2005. IEEE, Vol. 1. p. 155-158 4 p. 1505773

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  41. Published

    Photonic Crystal Slabs with Ring-Shaped holes in a Triangular Lattice

    Mulot, M., Säynätjoki, A., Arpiainen, S., Lipsanen, H. & Ahopelto, J., 2005, (7th International Conference on Transparent Optical Networks, Barcelona Spain, 3-7 July).

    Research output: Working paperProfessional

  42. Published

    Transformation of Self-Assembled InAs/InP Quantum Dots into Quantum Rings without Capping

    Sormunen, J., Riikonen, J., Mattila, M., Tiilikainen, J., Sopanen, M. & Lipsanen, H., 2005, In : Nano Letters. 5, 8, p. 1541-1543 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  43. 2004
  44. Published

    Passivation of GaAS surface by ultrathin epitaxial GaN layer

    Riikonen, J., Sormunen, J., Koskenvaara, H., Mattila, M., Sopanen, M. & Lipsanen, H., 10 Dec 2004, In : Journal of Crystal Growth. 272, 1-4, p. 621-626 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  45. Published

    Self assembled In(Ga)As islands on Ge substrate

    Knuuttila, L., Korkala, T., Sopanen, M. & Lipsanen, H., 10 Dec 2004, In : Journal of Crystal Growth. 272, 1-4, p. 221-226 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  46. Published

    GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor

    Sormunen, J., Riikonen, J., Sopanen, M. & Lipsanen, H., 1 Oct 2004, In : Journal of Crystal Growth. 270, 3-4, p. 346-350 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  47. Published

    The morphology of an InP wettig layer on GaAs

    Mattila, M., Sopanen, M. & Lipsanen, H., 15 May 2004, In : Applied Surface Science. 229, 1-4, p. 333-337 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  48. Published

    Morphology of ultra-thin cubic GaN layers on GaAs(100) grown by MOVPE with DMHy as nitrogen source

    Sormunen, J., Toivonen, J., Sopanen, M. & Lipsanen, H., 30 Jan 2004, In : Applied Surface Science. 222, 1-4, p. 286-292 7 p.

    Research output: Contribution to journalArticleScientificpeer-review

  49. Published

    Applications of thin GaN layers in GaAs heterostuctures grown using DMHy

    Sormunen, J., Riikonen, J., Koskenvaara, H., Mattila, M., Sopanen, M. & Lipsanen, H., 2004, IC-MOVPE XII, Hawaii, Usa, June 2004.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  50. Published

    Ga(In)NAs growth parameter optimization with low-pressure and atmospheric-pressure MOVPE systems

    Reentilä, O., Mattila, M., Toivonen, J., Hakkarainen, T., Sopanen, M. & Lipsanen, H., 2004, 2nd International Workshop on Metastable Combound Semiconductors and Heterostructures, 31.3-3.3.2004, Hawaii, USA.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  51. Published

    Growth parameter optimization for high nitrogen content Ga(In)NAs by MOVPE

    Mattila, M., Sormunen, J., Sopanen, M. & Lipsanen, H., 2004, 12th International Conference on Metal Organic Vapor Phase Epitaxy 30.5-4.6.2004.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  52. Published

    High-index-contrast Optical Weveguides on Silicon

    Säynätjoki, A., Arpiainen, S., Ahopelto, J. & Lipsanen, H., 2004, (International Conference on Physics of Semiconductors, Flagstaff, USA, 26-30 July 2004).

    Research output: Working paperProfessional

  53. Published

ID: 53661