Floris Reurings

Research outputs

  1. 2013
  2. Published

    On the interplay of point defects and Cd in non-polar ZnCdO films

    Zubiaga, A., Reurings, F., Tuomisto, F., Plazaola, F., Garcia, J. A., Kuznetsov, A. Y., Egger, W., Zuniga-Perez, J. & Munoz-Sanjose, V., 2013, In : Journal of Applied Physics. 113, 2, p. 1-7 7 p., 023512.

    Research output: Contribution to journalArticleScientificpeer-review

  3. 2010
  4. Published

    Defect redistribution in post-irradiation rapid-thermal-annealed InN

    Reurings, F., Rauch, C., Tuomisto, F., Jones, R. E., Yu, K. M., Walukiewicz, W. & Schaff, W. J., Oct 2010, In : Physical Review B. 82, 15, p. 1-4 4 p., 153202.

    Research output: Contribution to journalArticleScientificpeer-review

  5. Published

    In-vacancies in Si-doped InN

    Rauch, C., Reurings, F., Tuomisto, F., Veal, T., McConville, C. F., Lu, H., Schaff, W. J., Gallinat, C. S., Koblmüller, G., Speck, J. S., Egger, W., Löwe, B., Ravelli, L. & Sojak, S., May 2010, In : PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE. 207, 5, p. 1083-1086 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  6. Published

    Irradiation-induced defects in InN and GaN studied with positron annihilation

    Reurings, F., Tuomisto, F., Egger, W., Löwe, B., Ravelli, L., Sojak, S., Liliental-Weber, Z., Jones, R. E., Yu, K. M., Walukiewicz, W. & Schaff, W. J., May 2010, In : PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE. 207, 5, p. 1087-1090 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  7. Published

    Influence of Ga/N ratio on morphology, Ga vacancies and electrical transport in (0001) GaN grown by plasma-assisted molecular beam epitaxy at high temperature

    Koblmüller, G., Reurings, F., Tuomisto, F. & Speck, J. S., 2010, In : Applied Physics Letters. 97, 19, p. 1-3 3 p., 191915.

    Research output: Contribution to journalArticleScientificpeer-review

  8. Published

    In vacancies in InN grown by plasma-assisted molecular beam epitaxy

    Reurings, F., Tuomisto, F., Gallinat, C. S., Koblmüller, G. & Speck, J. S., 2010, In : Applied Physics Letters. 97, 25, p. 1-3 3 p., 251907.

    Research output: Contribution to journalArticleScientificpeer-review

  9. Published

    Slow positrons in materials science pulsed positron beam and defect studies in indium nitride

    Reurings, F., 2010, 121 p.

    Research output: ThesisDoctoral ThesisCollection of Articles

  10. 2009
  11. Published

    Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions

    Reurings, F., Tuomisto, F., Koblmüller, G., Gallinat, C. S. & Speck, J. S., Jun 2009, In : PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS. 6, Supplement 2, p. S401-S404 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  12. 2007
  13. Published

    Analysis of the time resolution of a pulsed positron beam

    Reurings, F. & Laakso, A., 2007, In : PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS. 4, 10, p. 3965-3968

    Research output: Contribution to journalArticleScientificpeer-review

  14. Published

    Interplay of Ga vacancies, C impurities, and yellow luminescence in GaN

    Reurings, F. & Tuomisto, F., 2007, Gallium Nitride Materials and Devices II. Morkoc, H. & Litton, CW. (eds.). p. 1-8 8 p. 64730M. (Proceedings of SPIE; vol. 6473).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  15. 2006
  16. Published

    Compact positron beam for measurement of transmission moderator efficiencies and positron yields of encapsulated sources

    Reurings, F., Laakso, A., Rytsölä, K., Pelli, A. & Saarinen, K., 2006, In : Applied Surface Science. 252, p. 3154-3158

    Research output: Contribution to journalArticleScientificpeer-review

  17. 2005
  18. Published

    Damage growth in random fuse networks

    Reurings, F. & Alava, M. J., 2005, In : European Physical Journal B. 47, p. 85-91

    Research output: Contribution to journalArticleScientificpeer-review

ID: 49803